High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama; Hiroshi Amano; Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Isamu Akasaki

doi:10.1143/JJAP.50.01AD03

High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama, Hiroshi Amano, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Scopus citations

Abstract

We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation. © 2011 The Japan Society of Applied Physics.

Original language	English (US)
Title of host publication	Japanese Journal of Applied Physics
DOIs	https://doi.org/10.1143/JJAP.50.01AD03
State	Published - Jan 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1143/JJAP.50.01AD03

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title = "High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate",

abstract = "We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation. {\textcopyright} 2011 The Japan Society of Applied Physics.",

author = "Takayuki Sugiyama and Hiroshi Amano and Daisuke Iida and Motoaki Iwaya and Satoshi Kamiyama and Isamu Akasaki",

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doi = "10.1143/JJAP.50.01AD03",

language = "English (US)",

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T1 - High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

AU - Sugiyama, Takayuki

AU - Amano, Hiroshi

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2011/1/1

Y1 - 2011/1/1

N2 - We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation. © 2011 The Japan Society of Applied Physics.

AB - We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation. © 2011 The Japan Society of Applied Physics.

UR - https://iopscience.iop.org/article/10.1143/JJAP.50.01AD03

UR - http://www.scopus.com/inward/record.url?scp=79955140436&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.01AD03

DO - 10.1143/JJAP.50.01AD03

M3 - Conference contribution

BT - Japanese Journal of Applied Physics

ER -

High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Abstract

Bibliographical note

ASJC Scopus subject areas

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