High temperature excitonic lasing characteristics of randomly assembled SnO2 nanowires

H. Y. Yang; S. F. Yu; S. H. Tsang; T. P. Chen; J. Gao; T. Wu

doi:10.1063/1.3240867

High temperature excitonic lasing characteristics of randomly assembled SnO₂ nanowires

H. Y. Yang, S. F. Yu, S. H. Tsang, T. P. Chen, J. Gao, T. Wu

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The lasing characteristics of randomly assembled SnO₂ nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO₂ so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO₂ with the increase of temperature.

Original language	English (US)
Article number	131106
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3240867
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High temperature excitonic lasing characteristics of randomly assembled SnO2 nanowires",

abstract = "The lasing characteristics of randomly assembled SnO2 nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2 so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2 with the increase of temperature.",

author = "Yang, {H. Y.} and Yu, {S. F.} and Tsang, {S. H.} and Chen, {T. P.} and J. Gao and T. Wu",

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language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

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T1 - High temperature excitonic lasing characteristics of randomly assembled SnO2 nanowires

AU - Yang, H. Y.

AU - Yu, S. F.

AU - Tsang, S. H.

AU - Chen, T. P.

AU - Gao, J.

AU - Wu, T.

PY - 2009

Y1 - 2009

N2 - The lasing characteristics of randomly assembled SnO2 nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2 so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2 with the increase of temperature.

AB - The lasing characteristics of randomly assembled SnO2 nanowires, whose excitonic gain is attributed to the exciton states bounded to the surface defects, are studied from room temperature up to 500 K. It is found that the amount of excited carriers under the lasing conditions is well below the Mott density of SnO2 so that high pumping intensities have less influence on the radiative recombination mechanism and wavelength of the lasing peaks. Furthermore, the redshift of lasing peaks is mainly due to the reduction of bandgap energy of SnO2 with the increase of temperature.

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U2 - 10.1063/1.3240867

DO - 10.1063/1.3240867

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131106

ER -

High temperature excitonic lasing characteristics of randomly assembled SnO₂ nanowires

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