High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

Wentao Huang; Yen Hung Lin; Thomas D. Anthopoulos

doi:10.1021/acsami.8b00121

High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

Wentao Huang, Yen Hung Lin, Thomas D. Anthopoulos^*

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C₆₁-butyric acid methyl ester (PC₆₁BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source-drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC₆₁BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315-400 nm), with a maximum photosensitivity and responsivity of 9 × 10³ and 3 × 10³ A/W, respectively. Finally, the temporal response of the PC₆₁BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.

Original language	English (US)
Pages (from-to)	10202-10210
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	12
DOIs	https://doi.org/10.1021/acsami.8b00121
State	Published - Mar 28 2018

Bibliographical note

Funding Information:
*E-mail: thomas.anthopoulos@kaust.edu.sa. ORCID Thomas D. Anthopoulos: 0000-0002-0978-8813 Author Contributions The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript. Notes The authors declare no competing financial interest.

Publisher Copyright:
© 2018 American Chemical Society.

ASJC Scopus subject areas

Materials Science(all)

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@article{d3b9fe65bf884e598800527c1e44fee3,

title = "High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative",

abstract = "Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source-drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315-400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.",

author = "Wentao Huang and Lin, {Yen Hung} and Anthopoulos, {Thomas D.}",

note = "Funding Information: *E-mail: thomas.anthopoulos@kaust.edu.sa. ORCID Thomas D. Anthopoulos: 0000-0002-0978-8813 Author Contributions The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript. Notes The authors declare no competing financial interest. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = mar,

day = "28",

doi = "10.1021/acsami.8b00121",

language = "English (US)",

volume = "10",

pages = "10202--10210",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

AU - Huang, Wentao

AU - Lin, Yen Hung

AU - Anthopoulos, Thomas D.

N1 - Funding Information: *E-mail: thomas.anthopoulos@kaust.edu.sa. ORCID Thomas D. Anthopoulos: 0000-0002-0978-8813 Author Contributions The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript. Notes The authors declare no competing financial interest. Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/3/28

Y1 - 2018/3/28

N2 - Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source-drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315-400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.

AB - Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source-drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315-400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.

UR - http://www.scopus.com/inward/record.url?scp=85044676460&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b00121

DO - 10.1021/acsami.8b00121

M3 - Article

AN - SCOPUS:85044676460

SN - 1944-8244

VL - 10

SP - 10202

EP - 10210

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 12

ER -

High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

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