High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth

Chao Shen; Changmin Lee; Tien Khee Ng; Shuji Nakamura; James S. Speck; Steven P. DenBaars; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi

doi:10.1364/OE.24.020281

High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth

Chao Shen, Changmin Lee, Tien Khee Ng, Shuji Nakamura, James S. Speck, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ

Original language	English (US)
Pages (from-to)	20281
Journal	Optics Express
Volume	24
Issue number	18
DOIs	https://doi.org/10.1364/OE.24.020281
State	Published - Aug 24 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).

Access to Document

10.1364/OE.24.020281

Cite this

@article{67d91d0df1fb48f88c6ecfa18986d9bc,

title = "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth",

abstract = "III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ",

author = "Chao Shen and Changmin Lee and Ng, {Tien Khee} and Shuji Nakamura and Speck, {James S.} and DenBaars, {Steven P.} and Alyamani, {Ahmed Y.} and El-Desouki, {Munir M.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).",

year = "2016",

month = aug,

day = "24",

doi = "10.1364/OE.24.020281",

language = "English (US)",

volume = "24",

pages = "20281",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "18",

}

TY - JOUR

T1 - High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth

AU - Shen, Chao

AU - Lee, Changmin

AU - Ng, Tien Khee

AU - Nakamura, Shuji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Alyamani, Ahmed Y.

AU - El-Desouki, Munir M.

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).

PY - 2016/8/24

Y1 - 2016/8/24

N2 - III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ

AB - III-nitride LEDs are fundamental components for visible-light communication (VLC). However, the modulation bandwidth is inherently limited by the relatively long carrier lifetime. In this letter, we present the 405 nm emitting superluminescent diode (SLD) with tilted facet design on semipolar GaN substrate, showing a broad emission of ∼9 nm at 20 mW optical power. Owing to the fast recombination (τ

UR - http://hdl.handle.net/10754/622556

UR - https://www.osapublishing.org/abstract.cfm?URI=oe-24-18-20281

UR - http://www.scopus.com/inward/record.url?scp=84989264362&partnerID=8YFLogxK

U2 - 10.1364/OE.24.020281

DO - 10.1364/OE.24.020281

M3 - Article

SN - 1094-4087

VL - 24

SP - 20281

JO - Optics Express

JF - Optics Express

IS - 18

ER -

High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this