High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Suey Li Toh; K. Li; C. H. Ang; E. Er; S. Redkar; K. P. Loh; C. B. Boothroyd; L. Chan

High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Suey Li Toh^*, K. Li, C. H. Ang, E. Er, S. Redkar, K. P. Loh, C. B. Boothroyd, L. Chan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.

Original language	English (US)
Title of host publication	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Editors	S.S Chung, A. Trigg, M.D. Ker, J. Thong
Pages	143-146
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan, Province of China Duration: Jul 5 2004 → Jul 8 2004

Other

Other	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan, Province of China
Period	07/5/04 → 07/8/04

ASJC Scopus subject areas

Engineering(all)

Cite this

Toh, S. L., Li, K., Ang, C. H., Er, E., Redkar, S., Loh, K. P., Boothroyd, C. B., & Chan, L. (2004). High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED. In S. S. Chung, A. Trigg, M. D. Ker, & J. Thong (Eds.), Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 (pp. 143-146). [8.4]

@inproceedings{bb9ca855065d4c9ca2d4ca15fa4abcd4,

title = "High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED",

abstract = "Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.",

author = "Toh, {Suey Li} and K. Li and Ang, {C. H.} and E. Er and S. Redkar and Loh, {K. P.} and Boothroyd, {C. B.} and L. Chan",

year = "2004",

language = "English (US)",

pages = "143--146",

editor = "S.S Chung and A. Trigg and M.D. Ker and J. Thong",

booktitle = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Toh, SL, Li, K, Ang, CH, Er, E, Redkar, S, Loh, KP, Boothroyd, CB & Chan, L 2004, High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED. in SS Chung, A Trigg, MD Ker & J Thong (eds), Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004., 8.4, pp. 143-146, Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, Province of China, 07/5/04.

High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED. / Toh, Suey Li; Li, K.; Ang, C. H. et al.

Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004. ed. / S.S Chung; A. Trigg; M.D. Ker; J. Thong. 2004. p. 143-146 8.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

AU - Toh, Suey Li

AU - Li, K.

AU - Ang, C. H.

AU - Er, E.

AU - Redkar, S.

AU - Loh, K. P.

AU - Boothroyd, C. B.

AU - Chan, L.

PY - 2004

Y1 - 2004

N2 - Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.

AB - Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.

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M3 - Conference contribution

AN - SCOPUS:14844303512

SP - 143

EP - 146

BT - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

A2 - Chung, S.S

A2 - Trigg, A.

A2 - Ker, M.D.

A2 - Thong, J.

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

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ASJC Scopus subject areas

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