High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures

T. K. Ong; B. S. Ooi; Y. L. Lam; Y. C. Chan; M. K. Rao

doi:10.1109/CLEOPR.1999.811369

High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures

T. K. Ong, B. S. Ooi, Y. L. Lam, Y. C. Chan, M. K. Rao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Quantum well intermixing (QWI) has been developed in III-V semiconductors to modify the quantum well (QW) profile in selected regions to enhance the blue shift of the optical absorption edge after growth. Laser induced disordering (LID) is one of the QWI techniques, which is impurity free and offers the possibility of direct writing capability. Pulsed-photoabsorption induced disordering (P-PAID) is a LID technique whereby the absorption of high-energy pulses from Nd:YAG laser pulses causes bond breaking and lattice disruption leading to an increased density of point defects. Subsequent high temperature annealing results in diffusion of the point defects and enhances the QWI rate. The laser pulses used were of similar duration to the thermal time constant of InP in order to minimize the effects of lateral diffusion. So far, photoluminescence (PL) spectroscopy measurements have demonstrated that the spatial resolution of the process is better than 25 μm. Time resolved photoluminescence measurements of the same sample have indicated a spatial resolution better than 20 μm. Micro-Raman spectra were taken in a backscattering configuration in an increment of 2.5 μm from the gold masked region.

Original language	English (US)
Title of host publication	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	193-194
Number of pages	2
ISBN (Electronic)	0780356616, 9780780356610
DOIs	https://doi.org/10.1109/CLEOPR.1999.811369
State	Published - 1999
Externally published	Yes
Event	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of Duration: Aug 30 1999 → Sep 3 1999

Publication series

Name	CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume	2

Other

Other	1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country/Territory	Korea, Republic of
City	Seoul
Period	08/30/99 → 09/3/99

Bibliographical note

Publisher Copyright:
© 1999 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Computer Networks and Communications
General Physics and Astronomy

Access to Document

10.1109/CLEOPR.1999.811369

Cite this

Ong, T. K., Ooi, B. S., Lam, Y. L., Chan, Y. C., & Rao, M. K. (1999). High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics (pp. 193-194). Article 811369 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.1999.811369

@inproceedings{dbef6cd9f36548cebd9abc2d2e417843,

title = "High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures",

abstract = "Quantum well intermixing (QWI) has been developed in III-V semiconductors to modify the quantum well (QW) profile in selected regions to enhance the blue shift of the optical absorption edge after growth. Laser induced disordering (LID) is one of the QWI techniques, which is impurity free and offers the possibility of direct writing capability. Pulsed-photoabsorption induced disordering (P-PAID) is a LID technique whereby the absorption of high-energy pulses from Nd:YAG laser pulses causes bond breaking and lattice disruption leading to an increased density of point defects. Subsequent high temperature annealing results in diffusion of the point defects and enhances the QWI rate. The laser pulses used were of similar duration to the thermal time constant of InP in order to minimize the effects of lateral diffusion. So far, photoluminescence (PL) spectroscopy measurements have demonstrated that the spatial resolution of the process is better than 25 μm. Time resolved photoluminescence measurements of the same sample have indicated a spatial resolution better than 20 μm. Micro-Raman spectra were taken in a backscattering configuration in an increment of 2.5 μm from the gold masked region.",

author = "Ong, {T. K.} and Ooi, {B. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Rao, {M. K.}",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 ; Conference date: 30-08-1999 Through 03-09-1999",

year = "1999",

doi = "10.1109/CLEOPR.1999.811369",

language = "English (US)",

series = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "193--194",

booktitle = "CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics",

address = "United States",

}

Ong, TK, Ooi, BS, Lam, YL, Chan, YC & Rao, MK 1999, High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures. in CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics., 811369, CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 193-194, 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999, Seoul, Korea, Republic of, 08/30/99. https://doi.org/10.1109/CLEOPR.1999.811369

High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures. / Ong, T. K.; Ooi, B. S.; Lam, Y. L. et al.
CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc., 1999. p. 193-194 811369 (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures

AU - Ong, T. K.

AU - Ooi, B. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Rao, M. K.

PY - 1999

Y1 - 1999

N2 - Quantum well intermixing (QWI) has been developed in III-V semiconductors to modify the quantum well (QW) profile in selected regions to enhance the blue shift of the optical absorption edge after growth. Laser induced disordering (LID) is one of the QWI techniques, which is impurity free and offers the possibility of direct writing capability. Pulsed-photoabsorption induced disordering (P-PAID) is a LID technique whereby the absorption of high-energy pulses from Nd:YAG laser pulses causes bond breaking and lattice disruption leading to an increased density of point defects. Subsequent high temperature annealing results in diffusion of the point defects and enhances the QWI rate. The laser pulses used were of similar duration to the thermal time constant of InP in order to minimize the effects of lateral diffusion. So far, photoluminescence (PL) spectroscopy measurements have demonstrated that the spatial resolution of the process is better than 25 μm. Time resolved photoluminescence measurements of the same sample have indicated a spatial resolution better than 20 μm. Micro-Raman spectra were taken in a backscattering configuration in an increment of 2.5 μm from the gold masked region.

AB - Quantum well intermixing (QWI) has been developed in III-V semiconductors to modify the quantum well (QW) profile in selected regions to enhance the blue shift of the optical absorption edge after growth. Laser induced disordering (LID) is one of the QWI techniques, which is impurity free and offers the possibility of direct writing capability. Pulsed-photoabsorption induced disordering (P-PAID) is a LID technique whereby the absorption of high-energy pulses from Nd:YAG laser pulses causes bond breaking and lattice disruption leading to an increased density of point defects. Subsequent high temperature annealing results in diffusion of the point defects and enhances the QWI rate. The laser pulses used were of similar duration to the thermal time constant of InP in order to minimize the effects of lateral diffusion. So far, photoluminescence (PL) spectroscopy measurements have demonstrated that the spatial resolution of the process is better than 25 μm. Time resolved photoluminescence measurements of the same sample have indicated a spatial resolution better than 20 μm. Micro-Raman spectra were taken in a backscattering configuration in an increment of 2.5 μm from the gold masked region.

UR - http://www.scopus.com/inward/record.url?scp=0033331766&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.1999.811369

DO - 10.1109/CLEOPR.1999.811369

M3 - Conference contribution

AN - SCOPUS:0033331766

T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

SP - 193

EP - 194

BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999

Y2 - 30 August 1999 through 3 September 1999

ER -

Ong TK, Ooi BS, Lam YL, Chan YC, Rao MK. High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures. In CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers Inc. 1999. p. 193-194. 811369. (CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics). doi: 10.1109/CLEOPR.1999.811369

High spatial resolution quantum well intermixing process in GaInAs/GaInAsP laser structures

Abstract

Publication series

Other

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this