High-spatial-resolution quantum-well intermixing process in GaInAs/ GaInAsP laser structure using pulsed-photoabsorption-induced disordering

T. K. Ong; O. Gunawan; B. S. Ooi; Y. L. Lam; Y. C. Chan; Y. Zhou; A. Saher Helmy; J. H. Marsh

doi:10.1063/1.372255

High-spatial-resolution quantum-well intermixing process in GaInAs/ GaInAsP laser structure using pulsed-photoabsorption-induced disordering

T. K. Ong^*, O. Gunawan, B. S. Ooi, Y. L. Lam, Y. C. Chan, Y. Zhou, A. Saher Helmy, J. H. Marsh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60 meV has been obtained from a sample masked with Si_xN_y/Au and exposed to the laser irradiation. Intermixing was detected in the irradiated regions through the shift of GaAs-like modes to lower frequencies. In addition, the intermixing induced GaInP longitudinal optical modes in the irradiated regions, which is evidence of the intermixing between the upper GaInAs cap and the GaInAsP layer. The spatial resolution of this process, which was obtained from micro-Raman spectra when scanned across the interface of the intermixing mask, was found to be better than 2.5 μm.

Original language	English (US)
Pages (from-to)	2775-2779
Number of pages	5
Journal	Journal of Applied Physics
Volume	87
Issue number	6
DOIs	https://doi.org/10.1063/1.372255
State	Published - Mar 15 2000
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.372255

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@article{a43f34ee11044070a17607d52ce797ec,

title = "High-spatial-resolution quantum-well intermixing process in GaInAs/ GaInAsP laser structure using pulsed-photoabsorption-induced disordering",

abstract = "Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60 meV has been obtained from a sample masked with SixNy/Au and exposed to the laser irradiation. Intermixing was detected in the irradiated regions through the shift of GaAs-like modes to lower frequencies. In addition, the intermixing induced GaInP longitudinal optical modes in the irradiated regions, which is evidence of the intermixing between the upper GaInAs cap and the GaInAsP layer. The spatial resolution of this process, which was obtained from micro-Raman spectra when scanned across the interface of the intermixing mask, was found to be better than 2.5 μm.",

author = "Ong, {T. K.} and O. Gunawan and Ooi, {B. S.} and Lam, {Y. L.} and Chan, {Y. C.} and Y. Zhou and Helmy, {A. Saher} and Marsh, {J. H.}",

year = "2000",

month = mar,

day = "15",

doi = "10.1063/1.372255",

language = "English (US)",

volume = "87",

pages = "2775--2779",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

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TY - JOUR

T1 - High-spatial-resolution quantum-well intermixing process in GaInAs/ GaInAsP laser structure using pulsed-photoabsorption-induced disordering

AU - Ong, T. K.

AU - Gunawan, O.

AU - Ooi, B. S.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Zhou, Y.

AU - Helmy, A. Saher

AU - Marsh, J. H.

PY - 2000/3/15

Y1 - 2000/3/15

N2 - Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60 meV has been obtained from a sample masked with SixNy/Au and exposed to the laser irradiation. Intermixing was detected in the irradiated regions through the shift of GaAs-like modes to lower frequencies. In addition, the intermixing induced GaInP longitudinal optical modes in the irradiated regions, which is evidence of the intermixing between the upper GaInAs cap and the GaInAsP layer. The spatial resolution of this process, which was obtained from micro-Raman spectra when scanned across the interface of the intermixing mask, was found to be better than 2.5 μm.

AB - Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60 meV has been obtained from a sample masked with SixNy/Au and exposed to the laser irradiation. Intermixing was detected in the irradiated regions through the shift of GaAs-like modes to lower frequencies. In addition, the intermixing induced GaInP longitudinal optical modes in the irradiated regions, which is evidence of the intermixing between the upper GaInAs cap and the GaInAsP layer. The spatial resolution of this process, which was obtained from micro-Raman spectra when scanned across the interface of the intermixing mask, was found to be better than 2.5 μm.

UR - http://www.scopus.com/inward/record.url?scp=0000484995&partnerID=8YFLogxK

U2 - 10.1063/1.372255

DO - 10.1063/1.372255

M3 - Article

AN - SCOPUS:0000484995

SN - 0021-8979

VL - 87

SP - 2775

EP - 2779

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

High-spatial-resolution quantum-well intermixing process in GaInAs/ GaInAsP laser structure using pulsed-photoabsorption-induced disordering

Abstract

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