High sensitivity low field magnetically gated resistive switching in CoFe 2O 4/La 0.66Sr 0.34MnO 3 heterostructure

Vishal Thakare; Guozhong Xing; Haiyang Peng; Abhimanyu Rana; Onkar Game; P. Anil Kumar; Arun Banpurkar; Yesappa Kolekar; Kartik Ghosh; Tom Wu; D. D. Sarma; Satishchandra B. Ogale

doi:10.1063/1.4707373

High sensitivity low field magnetically gated resistive switching in CoFe ₂O ₄/La _0.66Sr _0.34MnO ₃ heterostructure

Vishal Thakare^*, Guozhong Xing, Haiyang Peng, Abhimanyu Rana, Onkar Game, P. Anil Kumar, Arun Banpurkar, Yesappa Kolekar, Kartik Ghosh, Tom Wu, D. D. Sarma, Satishchandra B. Ogale

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the "magnetic" aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe ₂O ₄/La _0.66Sr _0.34MnO ₃ all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0-100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.

Original language	English (US)
Article number	172412
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4707373
State	Published - Apr 23 2012
Externally published	Yes

Bibliographical note

Funding Information:
V.T. thanks CSIR for the award of Senior Research Fellowship. The authors would like to thank Dr. Pushan Ayyub (TIFR, Mumbai) for help with TEM and Dr. Sankar Dhar for RBS (NUS, Singapore). The authors at NCL, Pune acknowledge support from CSIR (Network project), DAE-BRNS (CRP), and UGC (Indore) grant. D.D.S. acknowledges support from DAE-BRNS (CRP) and J. C. Bose Fellowship, while T.W. acknowledges funding from National Research Foundation of Singapore.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4707373

Cite this

@article{c9d13d03ff174a69bc5d500375974f5b,

title = "High sensitivity low field magnetically gated resistive switching in CoFe 2O 4/La 0.66Sr 0.34MnO 3 heterostructure",

abstract = "The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the {"}magnetic{"} aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe 2O 4/La 0.66Sr 0.34MnO 3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0-100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.",

author = "Vishal Thakare and Guozhong Xing and Haiyang Peng and Abhimanyu Rana and Onkar Game and {Anil Kumar}, P. and Arun Banpurkar and Yesappa Kolekar and Kartik Ghosh and Tom Wu and Sarma, {D. D.} and Ogale, {Satishchandra B.}",

note = "Funding Information: V.T. thanks CSIR for the award of Senior Research Fellowship. The authors would like to thank Dr. Pushan Ayyub (TIFR, Mumbai) for help with TEM and Dr. Sankar Dhar for RBS (NUS, Singapore). The authors at NCL, Pune acknowledge support from CSIR (Network project), DAE-BRNS (CRP), and UGC (Indore) grant. D.D.S. acknowledges support from DAE-BRNS (CRP) and J. C. Bose Fellowship, while T.W. acknowledges funding from National Research Foundation of Singapore.",

year = "2012",

month = apr,

day = "23",

doi = "10.1063/1.4707373",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "17",

}

TY - JOUR

T1 - High sensitivity low field magnetically gated resistive switching in CoFe 2O 4/La 0.66Sr 0.34MnO 3 heterostructure

AU - Thakare, Vishal

AU - Xing, Guozhong

AU - Peng, Haiyang

AU - Rana, Abhimanyu

AU - Game, Onkar

AU - Anil Kumar, P.

AU - Banpurkar, Arun

AU - Kolekar, Yesappa

AU - Ghosh, Kartik

AU - Wu, Tom

AU - Sarma, D. D.

AU - Ogale, Satishchandra B.

N1 - Funding Information: V.T. thanks CSIR for the award of Senior Research Fellowship. The authors would like to thank Dr. Pushan Ayyub (TIFR, Mumbai) for help with TEM and Dr. Sankar Dhar for RBS (NUS, Singapore). The authors at NCL, Pune acknowledge support from CSIR (Network project), DAE-BRNS (CRP), and UGC (Indore) grant. D.D.S. acknowledges support from DAE-BRNS (CRP) and J. C. Bose Fellowship, while T.W. acknowledges funding from National Research Foundation of Singapore.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the "magnetic" aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe 2O 4/La 0.66Sr 0.34MnO 3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0-100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.

AB - The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the "magnetic" aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe 2O 4/La 0.66Sr 0.34MnO 3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0-100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=84860333962&partnerID=8YFLogxK

U2 - 10.1063/1.4707373

DO - 10.1063/1.4707373

M3 - Article

AN - SCOPUS:84860333962

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172412

ER -