High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, T. K. Ng, K. L. Lew, A. Stöhr, S. Fedderwitz, M. Weiß, D. Jäger, N. Saadsaoud, E. Dogheche, D. Decoster, J. Chazelas

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