High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Tien Khee Ng, K. L. Lew, A. Stöhr, S. Fedderwitz, M. Weiß, D. Jäger, N. Saadsaoud, E. Dogheche, D. Decoster, J. Chazelas

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The iGaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3μm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.

Original languageEnglish (US)
Pages (from-to)7720-7725
Number of pages6
JournalOptics Express
Issue number11
StatePublished - May 26 2008

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this