High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

K. H. Tan; S. F. Yoon; W. K. Loke; S. Wicaksono; T. K. Ng; K. L. Lew; A. Stöhr; S. Fedderwitz; M. Weiß; D. Jäger; N. Saadsaoud; E. Dogheche; D. Decoster; J. Chazelas

doi:10.1364/OE.16.007720

High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, T. K. Ng, K. L. Lew, A. Stöhr, S. Fedderwitz, M. Weiß, D. Jäger, N. Saadsaoud, E. Dogheche, D. Decoster, J. Chazelas

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12 Scopus citations

Abstract

GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The iGaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3μm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.

Original language	English (US)
Pages (from-to)	7720-7725
Number of pages	6
Journal	Optics Express
Volume	16
Issue number	11
DOIs	https://doi.org/10.1364/OE.16.007720
State	Published - May 26 2008
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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Tan, K. H., Yoon, S. F., Loke, W. K., Wicaksono, S., Ng, T. K., Lew, K. L., Stöhr, A., Fedderwitz, S., Weiß, M., Jäger, D., Saadsaoud, N., Dogheche, E., Decoster, D., & Chazelas, J. (2008). High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy. Optics Express, 16(11), 7720-7725. https://doi.org/10.1364/OE.16.007720

@article{e4b87c2598c14e1495622d2b1db431ee,

title = "High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy",

abstract = "GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The iGaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3μm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.",

author = "Tan, {K. H.} and Yoon, {S. F.} and Loke, {W. K.} and S. Wicaksono and Ng, {T. K.} and Lew, {K. L.} and A. St{\"o}hr and S. Fedderwitz and M. Wei{\ss} and D. J{\"a}ger and N. Saadsaoud and E. Dogheche and D. Decoster and J. Chazelas",

year = "2008",

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doi = "10.1364/OE.16.007720",

language = "English (US)",

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Tan, KH, Yoon, SF, Loke, WK, Wicaksono, S, Ng, TK, Lew, KL, Stöhr, A, Fedderwitz, S, Weiß, M, Jäger, D, Saadsaoud, N, Dogheche, E, Decoster, D & Chazelas, J 2008, 'High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy', Optics Express, vol. 16, no. 11, pp. 7720-7725. https://doi.org/10.1364/OE.16.007720

TY - JOUR

T1 - High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

AU - Tan, K. H.

AU - Yoon, S. F.

AU - Loke, W. K.

AU - Wicaksono, S.

AU - Ng, T. K.

AU - Lew, K. L.

AU - Stöhr, A.

AU - Fedderwitz, S.

AU - Weiß, M.

AU - Jäger, D.

AU - Saadsaoud, N.

AU - Dogheche, E.

AU - Decoster, D.

AU - Chazelas, J.

PY - 2008/5/26

Y1 - 2008/5/26

N2 - GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The iGaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3μm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.

AB - GaNAsSb/GaAs p-i-n photodetectors with an intrinsic GaNAsSb photoabsorption layer grown at 350°C, 400°C, 440°C and 480°C, have been prepared using radio-frequency nitrogen plasma-assisted molecular beam epitaxy in conjunction with a valved antimony cracker source. The iGaNAsSb photoabsorption layer contains 3.3% of nitrogen and 8% of antimony, resulting in DC photo-response up to wavelengths of 1350nm. The device with i-GaNAsSb layer grown at 350°C exhibits extremely high photoresponsivity of 12A/W at 1.3μm. These photodetectors show characteristics which strongly suggest the presence of carrier avalanche process at reverse bias less than 5V.

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AN - SCOPUS:44649124262

SN - 1094-4087

VL - 16

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JO - Optics Express

JF - Optics Express

IS - 11

ER -

High responsivity GaNAsSb p-i-n photodetectors at 1.3μm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy

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