Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.
|Original language||English (US)|
|Journal||Semiconductor Science and Technology|
|State||Published - Dec 12 2017|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank Kenji Fujito of Mitsubishi Chemical Corporation for providing high-quality free-standing GaN substrates. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.