High rate etching of GAAS via connections using Cl2/AR plasma

Y. W. Chen; B. S. Ooi; G. I. Ng; C. L. Tan

High rate etching of GAAS via connections using Cl₂/AR plasma

Y. W. Chen^*, B. S. Ooi, G. I. Ng, C. L. Tan

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Via connection etching of GaAs has been demonstrated and achieved using various technologies to a certain degree of success. Among which, electron cyclotron resonance (ECR) technology seems to be promising as it offers the possibility of high rate etching of GaAs under high degree of plasma ionization, low-pressure and low-temperature environment. In this paper, we report the etching of GaAs via connections using Cl₂/Ar plasma in an ECR system. The effect of Cl₂ percentage in the Cl₂/Ar plasma on the average GaAs etch rate was studied. Very high etch rate (>5μm/min) was obtained from samples etched using 80% of Cl₂. The resulted etch profiles were optimized by investigating the effects of process pressure, RF power. Very smooth profile surface was obtained from samples etched with process pressure of lOmTorr, microwave and RF powers of 800W and 25W respectively.

Original language	English (US)
Pages	109-111
Number of pages	3
State	Published - 1999
Externally published	Yes
Event	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore Duration: Sep 8 1999 → Sep 10 1999

Other

Other	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
Country/Territory	Singapore
City	Singapore
Period	09/8/99 → 09/10/99

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "High rate etching of GAAS via connections using Cl2/AR plasma",

abstract = "Via connection etching of GaAs has been demonstrated and achieved using various technologies to a certain degree of success. Among which, electron cyclotron resonance (ECR) technology seems to be promising as it offers the possibility of high rate etching of GaAs under high degree of plasma ionization, low-pressure and low-temperature environment. In this paper, we report the etching of GaAs via connections using Cl2/Ar plasma in an ECR system. The effect of Cl2 percentage in the Cl2/Ar plasma on the average GaAs etch rate was studied. Very high etch rate (>5μm/min) was obtained from samples etched using 80% of Cl2. The resulted etch profiles were optimized by investigating the effects of process pressure, RF power. Very smooth profile surface was obtained from samples etched with process pressure of lOmTorr, microwave and RF powers of 800W and 25W respectively.",

author = "Chen, {Y. W.} and Ooi, {B. S.} and Ng, {G. I.} and Tan, {C. L.}",

year = "1999",

language = "English (US)",

pages = "109--111",

note = "8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 ; Conference date: 08-09-1999 Through 10-09-1999",

}

TY - CONF

T1 - High rate etching of GAAS via connections using Cl2/AR plasma

AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Ng, G. I.

AU - Tan, C. L.

PY - 1999

Y1 - 1999

N2 - Via connection etching of GaAs has been demonstrated and achieved using various technologies to a certain degree of success. Among which, electron cyclotron resonance (ECR) technology seems to be promising as it offers the possibility of high rate etching of GaAs under high degree of plasma ionization, low-pressure and low-temperature environment. In this paper, we report the etching of GaAs via connections using Cl2/Ar plasma in an ECR system. The effect of Cl2 percentage in the Cl2/Ar plasma on the average GaAs etch rate was studied. Very high etch rate (>5μm/min) was obtained from samples etched using 80% of Cl2. The resulted etch profiles were optimized by investigating the effects of process pressure, RF power. Very smooth profile surface was obtained from samples etched with process pressure of lOmTorr, microwave and RF powers of 800W and 25W respectively.

AB - Via connection etching of GaAs has been demonstrated and achieved using various technologies to a certain degree of success. Among which, electron cyclotron resonance (ECR) technology seems to be promising as it offers the possibility of high rate etching of GaAs under high degree of plasma ionization, low-pressure and low-temperature environment. In this paper, we report the etching of GaAs via connections using Cl2/Ar plasma in an ECR system. The effect of Cl2 percentage in the Cl2/Ar plasma on the average GaAs etch rate was studied. Very high etch rate (>5μm/min) was obtained from samples etched using 80% of Cl2. The resulted etch profiles were optimized by investigating the effects of process pressure, RF power. Very smooth profile surface was obtained from samples etched with process pressure of lOmTorr, microwave and RF powers of 800W and 25W respectively.

UR - http://www.scopus.com/inward/record.url?scp=1842678322&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1842678322

SP - 109

EP - 111

T2 - 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99

Y2 - 8 September 1999 through 10 September 1999

ER -

High rate etching of GAAS via connections using Cl₂/AR plasma

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