High quantum efficiency InGaN/GaN structures emitting at 540 nm

D. M. Graham*, P. Dawson, M. J. Godfrey, M. J. Kappers, P. M.F.J. Costa, M. E. Vickers, R. Datta, C. J. Humphreys, E. J. Thrush

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations


We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8 %. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures.

Original languageEnglish (US)
Pages (from-to)1970-1973
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
StatePublished - 2006
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

ASJC Scopus subject areas

  • Condensed Matter Physics


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