High quantum efficiency InGaN/GaN structures emitting at 540 nm

D. M. Graham; P. Dawson; M. J. Godfrey; M. J. Kappers; P. M.F.J. Costa; M. E. Vickers; R. Datta; C. J. Humphreys; E. J. Thrush

doi:10.1002/pssc.200565252

High quantum efficiency InGaN/GaN structures emitting at 540 nm

D. M. Graham^*, P. Dawson, M. J. Godfrey, M. J. Kappers, P. M.F.J. Costa, M. E. Vickers, R. Datta, C. J. Humphreys, E. J. Thrush

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8 %. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures.

Original language	English (US)
Pages (from-to)	1970-1973
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565252
State	Published - 2006
Externally published	Yes
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sep 2 2005

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200565252

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@article{8421ee6ea43845cd99a5205994b3627c,

title = "High quantum efficiency InGaN/GaN structures emitting at 540 nm",

abstract = "We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8 %. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures.",

author = "Graham, {D. M.} and P. Dawson and Godfrey, {M. J.} and Kappers, {M. J.} and Costa, {P. M.F.J.} and Vickers, {M. E.} and R. Datta and Humphreys, {C. J.} and Thrush, {E. J.}",

year = "2006",

doi = "10.1002/pssc.200565252",

language = "English (US)",

volume = "3",

pages = "1970--1973",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - High quantum efficiency InGaN/GaN structures emitting at 540 nm

AU - Graham, D. M.

AU - Dawson, P.

AU - Godfrey, M. J.

AU - Kappers, M. J.

AU - Costa, P. M.F.J.

AU - Vickers, M. E.

AU - Datta, R.

AU - Humphreys, C. J.

AU - Thrush, E. J.

PY - 2006

Y1 - 2006

N2 - We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8 %. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures.

AB - We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8 %. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures.

UR - http://www.scopus.com/inward/record.url?scp=33746358835&partnerID=8YFLogxK

U2 - 10.1002/pssc.200565252

DO - 10.1002/pssc.200565252

M3 - Conference article

AN - SCOPUS:33746358835

SN - 1862-6351

VL - 3

SP - 1970

EP - 1973

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

High quantum efficiency InGaN/GaN structures emitting at 540 nm

Abstract

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