High-quality photonic device fabrication using low-energy-ion-implantation- induced intermixing

Vincent Aimez; Jacques Beauvais; Jean Beerens; Hwi Siong Lim; Seng Lee Ng; Boon Siew Ooi

doi:10.1117/12.406460

High-quality photonic device fabrication using low-energy-ion-implantation- induced intermixing

Vincent Aimez^*, Jacques Beauvais, Jean Beerens, Hwi Siong Lim, Seng Lee Ng, Boon Siew Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.

Original language	English (US)
Pages (from-to)	616-623
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4087
DOIs	https://doi.org/10.1117/12.406460
State	Published - 2004
Externally published	Yes
Event	Applications of Photonic Technology 4 - Quebec City, QC, Canada Duration: Jun 12 2000 → Jun 12 2000

Keywords

Extended cavity lasers
Photonic integrated devices
Quantum well intermixing
Semiconductor laser diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.406460

Cite this

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title = "High-quality photonic device fabrication using low-energy-ion-implantation- induced intermixing",

abstract = "In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.",

keywords = "Extended cavity lasers, Photonic integrated devices, Quantum well intermixing, Semiconductor laser diode",

author = "Vincent Aimez and Jacques Beauvais and Jean Beerens and Lim, {Hwi Siong} and Ng, {Seng Lee} and Ooi, {Boon Siew}",

year = "2004",

doi = "10.1117/12.406460",

language = "English (US)",

volume = "4087",

pages = "616--623",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Applications of Photonic Technology 4 ; Conference date: 12-06-2000 Through 12-06-2000",

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T1 - High-quality photonic device fabrication using low-energy-ion-implantation- induced intermixing

AU - Aimez, Vincent

AU - Beauvais, Jacques

AU - Beerens, Jean

AU - Lim, Hwi Siong

AU - Ng, Seng Lee

AU - Ooi, Boon Siew

PY - 2004

Y1 - 2004

N2 - In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.

AB - In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.

KW - Extended cavity lasers

KW - Photonic integrated devices

KW - Quantum well intermixing

KW - Semiconductor laser diode

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DO - 10.1117/12.406460

M3 - Conference article

AN - SCOPUS:84875478997

SN - 0277-786X

VL - 4087

SP - 616

EP - 623

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Applications of Photonic Technology 4

Y2 - 12 June 2000 through 12 June 2000

ER -

High-quality photonic device fabrication using low-energy-ion-implantation- induced intermixing

Abstract

Keywords

ASJC Scopus subject areas

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