High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW

Abdullah Alatawi; Jorge Alberto Holguin Lerma; Chao Shen; Mohammad Khaled Shakfa; Abdullah A. Alhamoud; Abdulrahman M. Albadri; Ahmed Y. Alyamani; Tien Khee Ng; Boon S. Ooi

doi:10.1109/ISLC.2018.8516200

High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW

Abdullah Alatawi, Jorge Alberto Holguin Lerma, Chao Shen, Mohammad Khaled Shakfa, Abdullah A. Alhamoud, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.

Original language	English (US)
Title of host publication	2018 IEEE International Semiconductor Laser Conference (ISLC)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	129-130
Number of pages	2
ISBN (Print)	978-1-5386-4081-4
DOIs	https://doi.org/10.1109/ISLC.2018.8516200
State	Published - Dec 13 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008; King Abdullah University of Science and Technology (KAUST) BAS/1/1614-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01.

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10.1109/ISLC.2018.8516200

https://repository.kaust.edu.sa/bitstream/10754/628876/4/0000000205.pdf

Cite this

Alatawi, A., Holguin Lerma, J. A., Shen, C., Shakfa, M. K., Alhamoud, A. A., Albadri, AM., Alyamani, A. Y., Ng, T. K., & Ooi, B. S. (2018). High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW. In 2018 IEEE International Semiconductor Laser Conference (ISLC) (pp. 129-130). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ISLC.2018.8516200

@inproceedings{4ad8f755e8f049e6a67d24fdd6d8acb9,

title = "High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW",

abstract = "We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.",

author = "Abdullah Alatawi and {Holguin Lerma}, {Jorge Alberto} and Chao Shen and Shakfa, {Mohammad Khaled} and Alhamoud, {Abdullah A.} and Abdulrahman M. Albadri and Alyamani, {Ahmed Y.} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008; King Abdullah University of Science and Technology (KAUST) BAS/1/1614-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01.",

year = "2018",

month = dec,

day = "13",

doi = "10.1109/ISLC.2018.8516200",

language = "English (US)",

isbn = "978-1-5386-4081-4",

pages = "129--130",

booktitle = "2018 IEEE International Semiconductor Laser Conference (ISLC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - GEN

T1 - High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW

AU - Alatawi, Abdullah

AU - Holguin Lerma, Jorge Alberto

AU - Shen, Chao

AU - Shakfa, Mohammad Khaled

AU - Alhamoud, Abdullah A.

AU - Albadri, Abdulrahman M.

AU - Alyamani, Ahmed Y.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008; King Abdullah University of Science and Technology (KAUST) BAS/1/1614-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01.

PY - 2018/12/13

Y1 - 2018/12/13

N2 - We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.

AB - We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.

UR - http://hdl.handle.net/10754/628876

UR - https://ieee-islc.org/wp-content/uploads/2018/08/ISLC-2018-FULL-CONFERENCE-PROGRAM.pdf

UR - http://www.scopus.com/inward/record.url?scp=85057428276&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2018.8516200

DO - 10.1109/ISLC.2018.8516200

M3 - Conference contribution

SN - 978-1-5386-4081-4

SP - 129

EP - 130

BT - 2018 IEEE International Semiconductor Laser Conference (ISLC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW

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