High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW

Abdullah Alatawi, Jorge Alberto Holguin Lerma, Chao Shen, Mohammad Khaled Shakfa, Abdullah A. Alhamoud, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.
Original languageEnglish (US)
Title of host publication2018 IEEE International Semiconductor Laser Conference (ISLC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Print)978-1-5386-4081-4
StatePublished - Dec 13 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008; King Abdullah University of Science and Technology (KAUST) BAS/1/1614-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01.


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