High power AlGaInP laser diodes with zinc-diffused window mirror structure

Yun Xu, Qing Cao, Xiaopeng Zhu, Guohua Yang, Qiaoqiang Gan, Guofeng Song, Liang Guo, Yuzhang Li, Lianghui Chen

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.
Original languageEnglish (US)
Pages (from-to)647-649
Number of pages3
JournalChinese Optics Letters
Issue number11
StatePublished - Nov 1 2004
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2022-09-13

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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