High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

Yenhung Lin; Hendrik Faber; Kui Zhao; Qingxiao Wang; Aram Amassian; Martyn A. McLachlan; Thomas D. Anthopoulos

doi:10.1002/adma.201301622

High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

Yenhung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn A. McLachlan, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

162 Scopus citations

Abstract

An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	4340-4346
Number of pages	7
Journal	Advanced Materials
Volume	25
Issue number	31
DOIs	https://doi.org/10.1002/adma.201301622
State	Published - Jun 25 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Y. H. L., H. F., M. M., and T. D. A. are grateful to Dutch Polymer Institute (DPI) S-PLORE grant no. 735, and European Research Council (ERC) AMPRO project no. 280221 for financial support.

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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10.1002/adma.201301622

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title = "High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c",

abstract = "An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright {\textcopyright} 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Yenhung Lin and Hendrik Faber and Kui Zhao and Qingxiao Wang and Aram Amassian and McLachlan, {Martyn A.} and Anthopoulos, {Thomas D.}",

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AU - Lin, Yenhung

AU - Faber, Hendrik

AU - Zhao, Kui

AU - Wang, Qingxiao

AU - Amassian, Aram

AU - McLachlan, Martyn A.

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Y. H. L., H. F., M. M., and T. D. A. are grateful to Dutch Polymer Institute (DPI) S-PLORE grant no. 735, and European Research Council (ERC) AMPRO project no. 280221 for financial support.

PY - 2013/6/25

Y1 - 2013/6/25

N2 - An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

Abstract

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