Abstract
A study was conducted to demonstrate the fabrication of high-performance zinc oxide (ZnO) transistors and circuits using spray pyrolysis (SP) deposition technique in ambient atmosphere. The method was found to be compatible with large-area deposition and potentially addressed the issues of manufacturing cost and high operating voltages. High mobility n-channel thin-film transistors (TFTs) based on ZnO deposited at substrate temperatures in the range of 200-500 °C were realized to demonstrate the method. Semiconductor deposition was performed entirely in ambient atmosphere without the need for special precautions. It was demonstrated that the as-deposited ZnO films were of high quality and uniformity, while the SP was compatible with a number of solution-processible self-assembled monolayer (SAM) dielectrics. ZnO transistors operating at significantly low voltages were demonstrated by combining SP with soluble SAM dielectrics.
Original language | English (US) |
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Pages (from-to) | 2226-2231 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 21 |
Issue number | 21 |
DOIs | |
State | Published - Jun 5 2009 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2019-11-27ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering