High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere

Aneeqa Bashir*, Paul H. Wöbkenberg, Jeremy Smith, James M. Ball, George Adamopoulos, Donal D.C. Bradley, Thomas D. Anthopoulos

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

193 Scopus citations


A study was conducted to demonstrate the fabrication of high-performance zinc oxide (ZnO) transistors and circuits using spray pyrolysis (SP) deposition technique in ambient atmosphere. The method was found to be compatible with large-area deposition and potentially addressed the issues of manufacturing cost and high operating voltages. High mobility n-channel thin-film transistors (TFTs) based on ZnO deposited at substrate temperatures in the range of 200-500 °C were realized to demonstrate the method. Semiconductor deposition was performed entirely in ambient atmosphere without the need for special precautions. It was demonstrated that the as-deposited ZnO films were of high quality and uniformity, while the SP was compatible with a number of solution-processible self-assembled monolayer (SAM) dielectrics. ZnO transistors operating at significantly low voltages were demonstrated by combining SP with soluble SAM dielectrics.

Original languageEnglish (US)
Pages (from-to)2226-2231
Number of pages6
JournalAdvanced Materials
Issue number21
StatePublished - Jun 5 2009
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2019-11-27

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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