High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

Meng Zhang; Animesh Banerjee; Pallab Bhattacharya

doi:10.1016/j.jcrysgro.2010.12.038

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

Meng Zhang, Animesh Banerjee, Pallab Bhattacharya

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	470-472
Number of pages	3
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.12.038
State	Published - May 2011
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work was supported by a grant from KAUST.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1016/j.jcrysgro.2010.12.038

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title = "High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)",

abstract = "InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. {\textcopyright} 2010 Elsevier B.V. All rights reserved.",

author = "Meng Zhang and Animesh Banerjee and Pallab Bhattacharya",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported by a grant from KAUST. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2011",

month = may,

doi = "10.1016/j.jcrysgro.2010.12.038",

language = "English (US)",

volume = "323",

pages = "470--472",

journal = "Journal of Crystal Growth",

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publisher = "Elsevier B.V.",

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T1 - High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

AU - Zhang, Meng

AU - Banerjee, Animesh

AU - Bhattacharya, Pallab

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The work was supported by a grant from KAUST. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2011/5

Y1 - 2011/5

N2 - InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

AB - InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

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M3 - Article

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VL - 323

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

Abstract

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