InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Crystal Growth|
|State||Published - May 2011|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work was supported by a grant from KAUST.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.