High-performance solution-processed low-voltage polymer thin-film transistors with low-k/High-k bilayer gate dielectric

Wei Tang, Jinhua Li, Jiaqing Zhao, Weimin Zhang, Feng Yan, Xiaojun Guo

Research output: Contribution to journalArticlepeer-review

59 Scopus citations


Solution-processed low-voltage organic thin-film transistors (OTFTs) were fabricated using the high-mobility donor-acceptor copolymer semiconductor indacenodithiophene-co-benzothiadiazole (IDTBT) and large permittivity (high-k) relaxor ferroelectric polymer poly (vinylidene fluoride-trifluoroethylene-chlorofloroethylene). It is shown that, with the face-on molecule packing in as-deposited IDTBT films, the close interfacing between the backbone and the dielectric layer causes significant mobility degradation of the fabricated OTFTs due to dipole effects. By inserting a thin, low-polar dielectric layer between the high-k one and the channel, the dipole field can be effectively screened and the devices present a high mobility similar to that of previously reported high-voltage IDTBT OTFTs. With the bilayer gate dielectric and the IDTBT semiconductor, low-voltage OTFTs are achieved with the average mobility of 1.4 cm2/V·s and ON/OFF-current ratio larger than 106 , which is among the best reported performance so far for solution processed low-voltage OTFTs.

Original languageEnglish (US)
Article number7173430
Pages (from-to)950-952
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 1 2015
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.


  • Solution processed
  • bilayer dielectric
  • low voltage
  • organic thin-film transistors (OTFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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