To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.
|Original language||English (US)|
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - Mar 2013|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the Office of Sponsored Research at King Abdullah University of Science and Technology under Competitive Research Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor W. Tsai.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering