High-performance quantum-dot solids via elemental sulfur synthesis

Mingjian Yuan, Kyle W. Kemp, Susanna Thon, Jinyoung Kim, Kang Wei Chou, Aram Amassian, E. H. Sargent

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


An elemental-sulfur-based synthesis is reported, which, combined with processing to improve the size dispersion and passivation, results in a low-cost high-quality platform for small-bandgap PbS-CQD-based devices. Size-selective precipitation and cadmium chloride passivation are used to improve the power conversion efficiency of 1 eV bandgap CQD photovoltaic devices dramatically, which leads to record power conversion efficiency for a 1 eV PbS CQD solar cell of 5.4%. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)3513-3519
Number of pages7
JournalAdvanced Materials
Issue number21
StatePublished - Mar 21 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This publication is based in part on work supported by Award KUS-11009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. The authors thank Angstrom Engineering and Innovative Technology for useful discussions regarding material deposition methods and control of the glovebox environment, respectively. The research described in this paper was performed at the Canadian Light Source, which is funded by the Canada Foundation for Innovation, the Natural Sciences and Engineering Research Council of Canada, the National Research Council of Saskatchewan, Western Economic Diversification Canada, and the University of Saskatchewan. The authors would like to acknowledge the technical assistance and scientific guidance of C. Y. Kim, E. Palmiano, R. Wolowiec, and D. Kopilovic.

ASJC Scopus subject areas

  • Mechanics of Materials
  • General Materials Science
  • Mechanical Engineering


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