A high peak device performance and reduced device variability by combining the film-forming properties of polymers and high mobility small molecules was studied. Top-gate transistors were fabricated on glass substrates with evaporated gold (Au) source and drain electrodes. A 900nm layer of the fluorocarbon polymer CYTOP was used as the dielectric and gate electrodes were evaporated aluminum (Al). The substrates were cleaned by sonication in detergent solution (DECON90) and rinsed with deionized water. The semiconducting layer was spin-coated from a solution of either TIPS-pentacene or diF-TESADT plus the polymer matrix (poly-α-methyl-styrene or polytriarylamine) 1:1 by weight at 4 wt% concentration of solids in tetralin. DSIMS (dynamic secondary ion mass spectrometry) was used to confirm the distribution of the blend components. DSIMS measurements confirmed that there was a higher fraction of small molecule at the top surface.
Bibliographical noteGenerated from Scopus record by KAUST IRTS on 2019-11-27
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering