High performance organic field-effect transistors and integrated inverters

A. Ullmann, J. Ficker, W. Fix, H. Rost, W. Clemens, I. McCulloch, M. Giles

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Scopus citations


Integrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.
Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Number of pages6
StatePublished - Dec 1 2001
Externally publishedYes

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