High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

Feng Li; Yin Chen; Chun Ma; Ulrich Buttner; Karl Leo; Tao Wu

doi:10.1002/aelm.201600430

High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

Feng Li, Yin Chen, Chun Ma, Ulrich Buttner, Karl Leo, Tao Wu

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

Original language	English (US)
Pages (from-to)	1600430
Journal	Advanced Electronic Materials
Volume	3
Issue number	1
DOIs	https://doi.org/10.1002/aelm.201600430
State	Published - Dec 13 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST). YC thanks the support from CSU(502035002, 502044001), NSFC (21602258). The authors thank Roland Gresser and Olaf Zeika for support and discussions.

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10.1002/aelm.201600430

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@article{0411ddc9650c47709734f74657652f41,

title = "High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor",

abstract = "A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.",

author = "Feng Li and Yin Chen and Chun Ma and Ulrich Buttner and Karl Leo and Tao Wu",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST). YC thanks the support from CSU(502035002, 502044001), NSFC (21602258). The authors thank Roland Gresser and Olaf Zeika for support and discussions.",

year = "2016",

month = dec,

day = "13",

doi = "10.1002/aelm.201600430",

language = "English (US)",

volume = "3",

pages = "1600430",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

AU - Li, Feng

AU - Chen, Yin

AU - Ma, Chun

AU - Buttner, Ulrich

AU - Leo, Karl

AU - Wu, Tao

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST). YC thanks the support from CSU(502035002, 502044001), NSFC (21602258). The authors thank Roland Gresser and Olaf Zeika for support and discussions.

PY - 2016/12/13

Y1 - 2016/12/13

N2 - A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

AB - A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

UR - http://hdl.handle.net/10754/622774

UR - http://onlinelibrary.wiley.com/doi/10.1002/aelm.201600430/full

UR - http://www.scopus.com/inward/record.url?scp=85006761144&partnerID=8YFLogxK

U2 - 10.1002/aelm.201600430

DO - 10.1002/aelm.201600430

M3 - Article

SN - 2199-160X

VL - 3

SP - 1600430

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 1

ER -

High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

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