High-performance junction-free field-effect transistor based on blue phosphorene

Shubham Tyagi; Paresh Chandra Rout; Udo Schwingenschlögl

doi:10.1038/s41699-022-00361-1

High-performance junction-free field-effect transistor based on blue phosphorene

Shubham Tyagi, Paresh Chandra Rout, Udo Schwingenschlögl

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a high Ion/Ioff ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm.

Original language	English (US)
Journal	npj 2D Materials and Applications
Volume	6
Issue number	1
DOIs	https://doi.org/10.1038/s41699-022-00361-1
State	Published - Dec 9 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-12-15
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST.

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10.1038/s41699-022-00361-1

https://repository.kaust.edu.sa/bitstream/10754/686408/1/s41699-022-00361-1.pdf

Cite this

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title = "High-performance junction-free field-effect transistor based on blue phosphorene",

abstract = "Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green{\textquoteright}s function method, we demonstrate a high Ion/Ioff ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm.",

author = "Shubham Tyagi and Rout, {Paresh Chandra} and Udo Schwingenschl{\"o}gl",

note = "KAUST Repository Item: Exported on 2022-12-15 Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST.",

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AU - Tyagi, Shubham

AU - Rout, Paresh Chandra

AU - Schwingenschlögl, Udo

N1 - KAUST Repository Item: Exported on 2022-12-15 Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST.

PY - 2022/12/9

Y1 - 2022/12/9

N2 - Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a high Ion/Ioff ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm.

AB - Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a high Ion/Ioff ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm.

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JO - npj 2D Materials and Applications

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ER -

High-performance junction-free field-effect transistor based on blue phosphorene

Abstract

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