High-performance junction-free field-effect transistor based on blue phosphorene

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Two-dimensional semiconductors have great potential in high-performance electronic devices. However, the common way of contacting them with metals to inject charge carriers results in contact resistance. We propose a junction-free field-effect transistor consisting of semiconducting monolayer blue phosphorene as channel material (with high carrier mobility) and metallic bilayer blue phosphorene as electrodes. The junction-free design minimizes the contact resistance. Employing first-principles calculations along with the non-equilibrium Green’s function method, we demonstrate a high Ion/Ioff ratio of up to 2.6 × 104 and a remarkable transconductance of up to 811 μS/μm.
Original languageEnglish (US)
Journalnpj 2D Materials and Applications
Issue number1
StatePublished - Dec 9 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-12-15
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST.


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