High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Chao Zhao, Tien Khee Ng, Nini Wei, Bilal Janjua, Rami T. Elafandy, Aditya Prabaswara, Chao Shen, Giuseppe B. Consiglio, Abdulrahman Albadri, Ahmed Y. Alyamani, Munir M. El-desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.
Original languageEnglish (US)
Title of host publicationAsia Communications and Photonics Conference 2016
PublisherThe Optical Society
ISBN (Print)9780960038008
StatePublished - Nov 21 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).


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