High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Chao Zhao; Tien Khee Ng; Nini Wei; Bilal Janjua; Rami T. Elafandy; Aditya Prabaswara; Chao Shen; Giuseppe B. Consiglio; Abdulrahman Albadri; Ahmed Y. Alyamani; Munir M. El-desouki; Boon S. Ooi

doi:10.1364/acpc.2016.as1f.6

High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Chao Zhao, Tien Khee Ng, Nini Wei, Bilal Janjua, Rami T. Elafandy, Aditya Prabaswara, Chao Shen, Giuseppe B. Consiglio, Abdulrahman Albadri, Ahmed Y. Alyamani, Munir M. El-desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

Original language	English (US)
Title of host publication	Asia Communications and Photonics Conference 2016
Publisher	The Optical Society
ISBN (Print)	9780960038008
DOIs	https://doi.org/10.1364/acpc.2016.as1f.6
State	Published - Nov 21 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).

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10.1364/acpc.2016.as1f.6

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Zhao, C., Ng, T. K., Wei, N., Janjua, B., Elafandy, R. T., Prabaswara, A., Shen, C., Consiglio, G. B., Albadri, A., Alyamani, A. Y., El-desouki, M. M., & Ooi, B. S. (2016). High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics. In Asia Communications and Photonics Conference 2016 The Optical Society. https://doi.org/10.1364/acpc.2016.as1f.6

@inproceedings{2547a14fa84549e9bfa13fe6b49b21ec,

title = "High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics",

abstract = "The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.",

author = "Chao Zhao and Ng, {Tien Khee} and Nini Wei and Bilal Janjua and Elafandy, {Rami T.} and Aditya Prabaswara and Chao Shen and Consiglio, {Giuseppe B.} and Abdulrahman Albadri and Alyamani, {Ahmed Y.} and El-desouki, {Munir M.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).",

year = "2016",

month = nov,

day = "21",

doi = "10.1364/acpc.2016.as1f.6",

language = "English (US)",

isbn = "9780960038008",

booktitle = "Asia Communications and Photonics Conference 2016",

publisher = "The Optical Society",

address = "United States",

}

TY - GEN

T1 - High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

AU - Zhao, Chao

AU - Ng, Tien Khee

AU - Wei, Nini

AU - Janjua, Bilal

AU - Elafandy, Rami T.

AU - Prabaswara, Aditya

AU - Shen, Chao

AU - Consiglio, Giuseppe B.

AU - Albadri, Abdulrahman

AU - Alyamani, Ahmed Y.

AU - El-desouki, Munir M.

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).

PY - 2016/11/21

Y1 - 2016/11/21

N2 - The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

AB - The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

UR - http://hdl.handle.net/10754/623167

UR - https://www.osapublishing.org/abstract.cfm?URI=ACPC-2016-AS1F.6

UR - http://www.scopus.com/inward/record.url?scp=85016397990&partnerID=8YFLogxK

U2 - 10.1364/acpc.2016.as1f.6

DO - 10.1364/acpc.2016.as1f.6

M3 - Conference contribution

SN - 9780960038008

BT - Asia Communications and Photonics Conference 2016

PB - The Optical Society

ER -

High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

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