High-Performance Field-Effect Transistors Based on αP and βP

Enrique Montes Muñoz, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction-free field-effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first-principles calculations and the nonequilibrium Green's function method, the proposed field-effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances.
Original languageEnglish (US)
Pages (from-to)1807810
JournalAdvanced Materials
Issue number18
StatePublished - Mar 25 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).


Dive into the research topics of 'High-Performance Field-Effect Transistors Based on αP and βP'. Together they form a unique fingerprint.

Cite this