High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

Daehwan Jung; Robert Herrick; Justin Norman; Yating Wan; Arthur C. Gossard; John E. Bowers

doi:10.1109/OECC.2018.8730014

High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

Daehwan Jung, Robert Herrick, Justin Norman, Yating Wan, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35°C and 65,000 hours at 60°C.

Original language	English (US)
Title of host publication	23rd Opto-Electronics and Communications Conference, OECC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781538691458
DOIs	https://doi.org/10.1109/OECC.2018.8730014
State	Published - Jul 1 2018
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

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10.1109/OECC.2018.8730014

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@inproceedings{784849fd73ca42fcb9c6d147cec743aa,

title = "High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si",

abstract = "1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35°C and 65,000 hours at 60°C.",

author = "Daehwan Jung and Robert Herrick and Justin Norman and Yating Wan and Gossard, {Arthur C.} and Bowers, {John E.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-18",

year = "2018",

month = jul,

day = "1",

doi = "10.1109/OECC.2018.8730014",

language = "English (US)",

isbn = "9781538691458",

booktitle = "23rd Opto-Electronics and Communications Conference, OECC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

TY - GEN

T1 - High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

AU - Jung, Daehwan

AU - Herrick, Robert

AU - Norman, Justin

AU - Wan, Yating

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2018/7/1

Y1 - 2018/7/1

N2 - 1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35°C and 65,000 hours at 60°C.

AB - 1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35°C and 65,000 hours at 60°C.

UR - https://ieeexplore.ieee.org/document/8730014/

UR - http://www.scopus.com/inward/record.url?scp=85067913281&partnerID=8YFLogxK

U2 - 10.1109/OECC.2018.8730014

DO - 10.1109/OECC.2018.8730014

M3 - Conference contribution

SN - 9781538691458

BT - 23rd Opto-Electronics and Communications Conference, OECC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

Abstract

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