Keyphrases
Molecular Beam Epitaxy
100%
Plasma-assisted Molecular Beam Epitaxy
100%
High Nitrogen
100%
Nitrogen Flux
100%
InxGa1-xN
100%
Growth Rate
50%
High Temperature
25%
III-N
25%
Metal-organic Chemical Vapor Deposition (MOCVD)
25%
Light-emitting Devices
25%
Material Quality
25%
High Heat Flux
25%
Growth Temperature
25%
Terraces
25%
Radio Frequency Plasma
25%
Film Composition
25%
Plasma System
25%
Active Nitrogen
25%
Engineering
Emitting Device
100%
Metal Organic Chemical Vapor Deposition
100%
Material Quality
100%
Plasma System
100%
Radio Frequency
100%
Growth Temperature
100%
Material Science
Molecular Beam Epitaxy
100%
Film
100%
Metal-Organic Chemical Vapor Deposition
50%