High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films

Kelsey F. Jorgensen, Bastien Bonef, James S. Speck

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Growth of efficient III-N based light emitting devices by plasma assisted molecular beam epitaxy has been elusive, even though the technique has attractive advantages in comparison to metal organic chemical vapor deposition. Modern high-flux radio frequency plasma systems could remedy this issue by enabling growth of InxGa1-xN at higher temperatures than previously possible, likely improving the material quality. In this work, active nitrogen fluxes of up to 3.5 μm/h GaN-equivalent growth rate were employed to grow InxGa1-xN alloys. InxGa1-xN growth rates of 1.3 μm/h were demonstrated at growth temperatures of 550 °C and 600 °C with maximum film compositions of In0.25Ga0.75N and In0.21Ga0.79N, respectively. A composition of In0.05Ga0.95N was observed in a film grown at 700 °C with smooth step-terrace morphology.
Original languageEnglish (US)
Pages (from-to)125738
JournalJournal of Crystal Growth
Volume546
DOIs
StatePublished - Sep 2020
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2021-02-11
Acknowledgements: This work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program, the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB, the Simons Foundation (601952, JS), and (NSF) RAISE program (Grant No. A007231601, JS).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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