High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Tao Wang; Xinqiang Wang; Zhaoying Chen; Xiaoxiao Sun; Ping Wang; Xiantong Zheng; Xin Rong; Liuyun Yang; Weiwei Guo; Ding Wang; Jianpeng Cheng; Xi Lin; Peng Li; Jun Li; Xin He; Qiang Zhang; Mo Li; Jian Zhang; Xuelin Yang; Fujun Xu; Weikun Ge; Xixiang Zhang; Bo Shen

doi:10.1002/advs.201800844

High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Tao Wang, Xinqiang Wang^*, Zhaoying Chen, Xiaoxiao Sun, Ping Wang, Xiantong Zheng, Xin Rong, Liuyun Yang, Weiwei Guo, Ding Wang, Jianpeng Cheng, Xi Lin, Peng Li, Jun Li, Xin He, Qiang Zhang, Mo Li, Jian Zhang, Xuelin Yang, Fujun XuWeikun Ge, Xixiang Zhang, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Due to the intrinsic spontaneous and piezoelectric polarization effect, III-nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III-nitrides, InN is predicted to be the best conductive-channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall-effect measurements at room temperature to be 2.29 × 10³ cm² V⁻¹ s⁻¹ and 2.14 × 10¹³ cm⁻², respectively, including contribution from the InN bottom layer. The Shubnikov–de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 10¹² cm⁻² and a quantum mobility of 1.48 × 10³ cm² V⁻¹ s⁻¹. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher-speed transistors based on an InN channel.

Original language	English (US)
Article number	1800844
Journal	Advanced Science
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/advs.201800844
State	Published - Sep 2018

Bibliographical note

Funding Information:
This work was partly supported by the National Key R&D Program of China (No. 2016YFB0400100), the Science Challenge Project (No. TZ2016003-2), the National Natural Science Foundation of China (Nos. 61734001, 61521004, 61674010), NSAF (No. U1630109), and by the King Abdullah University of Science and Technology (KAUST). The authors are grateful to Prof. Yanwu Xie, Yan Wen, and Lixian Wang for fruitful discussions.

Publisher Copyright:
© 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

2D electron gas
InGaN/InN
molecular beam epitaxy

ASJC Scopus subject areas

Medicine (miscellaneous)
Chemical Engineering(all)
Materials Science(all)
Biochemistry, Genetics and Molecular Biology (miscellaneous)
Engineering(all)
Physics and Astronomy(all)

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10.1002/advs.201800844

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Wang, T., Wang, X., Chen, Z., Sun, X., Wang, P., Zheng, X., Rong, X., Yang, L., Guo, W., Wang, D., Cheng, J., Lin, X., Li, P., Li, J., He, X., Zhang, Q., Li, M., Zhang, J., Yang, X., ... Shen, B. (2018). High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy. Advanced Science, 5(9), [1800844]. https://doi.org/10.1002/advs.201800844

@article{1c4b4bbc87aa4214990edf2743bfcc5e,

title = "High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy",

abstract = "Due to the intrinsic spontaneous and piezoelectric polarization effect, III-nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III-nitrides, InN is predicted to be the best conductive-channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall-effect measurements at room temperature to be 2.29 × 103 cm2 V−1 s−1 and 2.14 × 1013 cm−2, respectively, including contribution from the InN bottom layer. The Shubnikov–de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 1012 cm−2 and a quantum mobility of 1.48 × 103 cm2 V−1 s−1. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher-speed transistors based on an InN channel.",

keywords = "2D electron gas, InGaN/InN, molecular beam epitaxy",

author = "Tao Wang and Xinqiang Wang and Zhaoying Chen and Xiaoxiao Sun and Ping Wang and Xiantong Zheng and Xin Rong and Liuyun Yang and Weiwei Guo and Ding Wang and Jianpeng Cheng and Xi Lin and Peng Li and Jun Li and Xin He and Qiang Zhang and Mo Li and Jian Zhang and Xuelin Yang and Fujun Xu and Weikun Ge and Xixiang Zhang and Bo Shen",

note = "Funding Information: This work was partly supported by the National Key R&D Program of China (No. 2016YFB0400100), the Science Challenge Project (No. TZ2016003-2), the National Natural Science Foundation of China (Nos. 61734001, 61521004, 61674010), NSAF (No. U1630109), and by the King Abdullah University of Science and Technology (KAUST). The authors are grateful to Prof. Yanwu Xie, Yan Wen, and Lixian Wang for fruitful discussions. Publisher Copyright: {\textcopyright} 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = sep,

doi = "10.1002/advs.201800844",

language = "English (US)",

volume = "5",

journal = "Advanced Science",

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publisher = "Wiley Open Access",

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Wang, T, Wang, X, Chen, Z, Sun, X, Wang, P, Zheng, X, Rong, X, Yang, L, Guo, W, Wang, D, Cheng, J, Lin, X, Li, P, Li, J, He, X, Zhang, Q, Li, M, Zhang, J, Yang, X, Xu, F, Ge, W, Zhang, X & Shen, B 2018, 'High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy', Advanced Science, vol. 5, no. 9, 1800844. https://doi.org/10.1002/advs.201800844

TY - JOUR

T1 - High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

AU - Wang, Tao

AU - Wang, Xinqiang

AU - Chen, Zhaoying

AU - Sun, Xiaoxiao

AU - Wang, Ping

AU - Zheng, Xiantong

AU - Rong, Xin

AU - Yang, Liuyun

AU - Guo, Weiwei

AU - Wang, Ding

AU - Cheng, Jianpeng

AU - Lin, Xi

AU - Li, Peng

AU - Li, Jun

AU - He, Xin

AU - Zhang, Qiang

AU - Li, Mo

AU - Zhang, Jian

AU - Yang, Xuelin

AU - Xu, Fujun

AU - Ge, Weikun

AU - Zhang, Xixiang

AU - Shen, Bo

N1 - Funding Information: This work was partly supported by the National Key R&D Program of China (No. 2016YFB0400100), the Science Challenge Project (No. TZ2016003-2), the National Natural Science Foundation of China (Nos. 61734001, 61521004, 61674010), NSAF (No. U1630109), and by the King Abdullah University of Science and Technology (KAUST). The authors are grateful to Prof. Yanwu Xie, Yan Wen, and Lixian Wang for fruitful discussions. Publisher Copyright: © 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2018/9

Y1 - 2018/9

N2 - Due to the intrinsic spontaneous and piezoelectric polarization effect, III-nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III-nitrides, InN is predicted to be the best conductive-channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall-effect measurements at room temperature to be 2.29 × 103 cm2 V−1 s−1 and 2.14 × 1013 cm−2, respectively, including contribution from the InN bottom layer. The Shubnikov–de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 1012 cm−2 and a quantum mobility of 1.48 × 103 cm2 V−1 s−1. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher-speed transistors based on an InN channel.

AB - Due to the intrinsic spontaneous and piezoelectric polarization effect, III-nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III-nitrides, InN is predicted to be the best conductive-channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall-effect measurements at room temperature to be 2.29 × 103 cm2 V−1 s−1 and 2.14 × 1013 cm−2, respectively, including contribution from the InN bottom layer. The Shubnikov–de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 1012 cm−2 and a quantum mobility of 1.48 × 103 cm2 V−1 s−1. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher-speed transistors based on an InN channel.

KW - 2D electron gas

KW - InGaN/InN

KW - molecular beam epitaxy

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U2 - 10.1002/advs.201800844

DO - 10.1002/advs.201800844

M3 - Article

C2 - 30250812

AN - SCOPUS:85053474979

SN - 2198-3844

VL - 5

JO - Advanced Science

JF - Advanced Science

IS - 9

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ER -

High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

Abstract

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Keywords

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