A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)