High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO2 high-k dielectric grown by spray pyrolysis in ambient air

George Adamopoulos; Stuart Thomas; Paul H. Wöbkenberg; Donal D.C. Bradley; Martyn A. McLachlan; Thomas D. Anthopoulos

doi:10.1002/adma.201003935

High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO₂ high-k dielectric grown by spray pyrolysis in ambient air

George Adamopoulos^*, Stuart Thomas, Paul H. Wöbkenberg, Donal D.C. Bradley, Martyn A. McLachlan, Thomas D. Anthopoulos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

226 Scopus citations

Abstract

Sequential layers of the high-k dielectric ZrO₂ and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm² V^-1 s^-1.

Original language	English (US)
Pages (from-to)	1894-1898
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	16
DOIs	https://doi.org/10.1002/adma.201003935
State	Published - Apr 26 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2019-11-27

Keywords

ZnO
high-k dielectrics
oxide transistors
spray pyrolysis

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201003935

Cite this

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title = "High-mobility low-voltage ZnO and Li-doped ZnO transistors based on ZrO2 high-k dielectric grown by spray pyrolysis in ambient air",

abstract = "Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm2 V-1 s-1.",

keywords = "ZnO, high-k dielectrics, oxide transistors, spray pyrolysis",

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year = "2011",

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AU - Adamopoulos, George

AU - Thomas, Stuart

AU - Wöbkenberg, Paul H.

AU - Bradley, Donal D.C.

AU - McLachlan, Martyn A.

AU - Anthopoulos, Thomas D.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 2011/4/26

Y1 - 2011/4/26

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AB - Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm2 V-1 s-1.

KW - ZnO

KW - high-k dielectrics

KW - oxide transistors

KW - spray pyrolysis

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