High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

Amit Tewari; Srinivas Gandla; Anil Reddy Pininti; K. Karuppasamy; Siva Böhm; Arup R. Bhattacharyya; Christopher R. McNeill; Dipti Gupta

doi:10.1063/1.4930305

High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

Amit Tewari, Srinivas Gandla, Anil Reddy Pininti, K. Karuppasamy, Siva Böhm, Arup R. Bhattacharyya, Christopher R. McNeill, Dipti Gupta^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ^®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of-1.4V (operating voltage: 0to-4V) together with a mobility of 1.9cm² V^-1s^-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ∼20.02), a low interfacial trap density (2.56 × 10¹¹cm^-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234nm.

Original language	English (US)
Article number	103302
Journal	Applied Physics Letters
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.4930305
State	Published - Sep 7 2015

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Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric",

abstract = "This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan {\textregistered}SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of-1.4V (operating voltage: 0to-4V) together with a mobility of 1.9cm2 V-1s-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ∼20.02), a low interfacial trap density (2.56 × 1011cm-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234nm.",

author = "Amit Tewari and Srinivas Gandla and Pininti, {Anil Reddy} and K. Karuppasamy and Siva B{\"o}hm and Bhattacharyya, {Arup R.} and McNeill, {Christopher R.} and Dipti Gupta",

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year = "2015",

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doi = "10.1063/1.4930305",

language = "English (US)",

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T1 - High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

AU - Tewari, Amit

AU - Gandla, Srinivas

AU - Pininti, Anil Reddy

AU - Karuppasamy, K.

AU - Böhm, Siva

AU - Bhattacharyya, Arup R.

AU - McNeill, Christopher R.

AU - Gupta, Dipti

PY - 2015/9/7

Y1 - 2015/9/7

N2 - This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of-1.4V (operating voltage: 0to-4V) together with a mobility of 1.9cm2 V-1s-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ∼20.02), a low interfacial trap density (2.56 × 1011cm-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234nm.

AB - This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of-1.4V (operating voltage: 0to-4V) together with a mobility of 1.9cm2 V-1s-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ∼20.02), a low interfacial trap density (2.56 × 1011cm-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234nm.

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DO - 10.1063/1.4930305

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High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

Abstract

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