High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

Mohamad Insan Nugraha, Roger Häusermann, Satria Zulkarnaen Bisri, Hiroyuki Matsui, Mykhailo Sytnyk, Wolfgang Heiss, Jun Takeya*, Maria Antonietta Loi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V-1 s-1) and the high on/off ratio (105-106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

Original languageEnglish (US)
Pages (from-to)2107-2112
Number of pages6
JournalAdvanced Materials
Volume27
Issue number12
DOIs
StatePublished - Mar 25 2015

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

  • ambipolar transistors
  • colloidal nanocrystals
  • density of trap states
  • field effect transistors

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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