High mobility ambipolar charge transport in polyselenophene conjugated polymers

Zhuoying Chen; Henrik Lemke; Sebastian Albert-Seifried; Mario Caironi; Martin Meedom Nielsen; Martin Heeney; Weimin Zhang; Iain McCulloch; Henning Sirringhaus

doi:10.1002/adma.200903711

High mobility ambipolar charge transport in polyselenophene conjugated polymers

Zhuoying Chen^*, Henrik Lemke, Sebastian Albert-Seifried, Mario Caironi, Martin Meedom Nielsen, Martin Heeney, Weimin Zhang, Iain McCulloch, Henning Sirringhaus

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

177 Scopus citations

Abstract

(Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm² V^-1 s^-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.

Original language	English (US)
Pages (from-to)	2371-2375
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	21
DOIs	https://doi.org/10.1002/adma.200903711
State	Published - Jun 4 2010
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
General Materials Science

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title = "High mobility ambipolar charge transport in polyselenophene conjugated polymers",

abstract = "(Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V-1 s-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.",

author = "Zhuoying Chen and Henrik Lemke and Sebastian Albert-Seifried and Mario Caironi and Nielsen, {Martin Meedom} and Martin Heeney and Weimin Zhang and Iain McCulloch and Henning Sirringhaus",

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doi = "10.1002/adma.200903711",

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T1 - High mobility ambipolar charge transport in polyselenophene conjugated polymers

AU - Chen, Zhuoying

AU - Lemke, Henrik

AU - Albert-Seifried, Sebastian

AU - Caironi, Mario

AU - Nielsen, Martin Meedom

AU - Heeney, Martin

AU - Zhang, Weimin

AU - McCulloch, Iain

AU - Sirringhaus, Henning

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2010/6/4

Y1 - 2010/6/4

N2 - (Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V-1 s-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.

AB - (Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V-1 s-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.

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U2 - 10.1002/adma.200903711

DO - 10.1002/adma.200903711

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VL - 22

SP - 2371

EP - 2375

JO - Advanced Materials

JF - Advanced Materials

IS - 21

ER -

High mobility ambipolar charge transport in polyselenophene conjugated polymers

Abstract

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ASJC Scopus subject areas

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