High luminous efficacy green light-emitting diodes with AlGaN cap layer

Abdullah I. Alhassan, Robert M. Farrell, Burhan Saifaddin, Asad Mughal, Feng Wu, Steven P. Denbaars, Shuji Nakamura, James S. Speck

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.
Original languageEnglish (US)
Pages (from-to)17868-17873
Number of pages6
JournalOPTICS EXPRESS
Volume24
Issue number16
DOIs
StatePublished - Jul 27 2016
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-01
Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) Nanotechnology Infrastructure Network (NNIN) (ECS-0335765).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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