High luminous efficacy green light-emitting diodes with AlGaN cap layer

Abdullah I. Alhassan; Robert M. Farrell; Burhan Saifaddin; Asad Mughal; Feng Wu; Steven P. Denbaars; Shuji Nakamura; James S. Speck

doi:10.1364/OE.24.017868

High luminous efficacy green light-emitting diodes with AlGaN cap layer

Abdullah I. Alhassan, Robert M. Farrell, Burhan Saifaddin, Asad Mughal, Feng Wu, Steven P. Denbaars, Shuji Nakamura, James S. Speck

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

Original language	English (US)
Pages (from-to)	17868-17873
Number of pages	6
Journal	OPTICS EXPRESS
Volume	24
Issue number	16
DOIs	https://doi.org/10.1364/OE.24.017868
State	Published - Jul 27 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-01
Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) Nanotechnology Infrastructure Network (NNIN) (ECS-0335765).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.24.017868

Cite this

@article{bac4aef4f483436aac98fb1f55447d9a,

title = "High luminous efficacy green light-emitting diodes with AlGaN cap layer",

abstract = "We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.",

author = "Alhassan, {Abdullah I.} and Farrell, {Robert M.} and Burhan Saifaddin and Asad Mughal and Feng Wu and Denbaars, {Steven P.} and Shuji Nakamura and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2022-06-01 Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) Nanotechnology Infrastructure Network (NNIN) (ECS-0335765). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2016",

month = jul,

day = "27",

doi = "10.1364/OE.24.017868",

language = "English (US)",

volume = "24",

pages = "17868--17873",

journal = "OPTICS EXPRESS",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "16",

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TY - JOUR

T1 - High luminous efficacy green light-emitting diodes with AlGaN cap layer

AU - Alhassan, Abdullah I.

AU - Farrell, Robert M.

AU - Saifaddin, Burhan

AU - Mughal, Asad

AU - Wu, Feng

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2022-06-01 Acknowledgements: KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) Nanotechnology Infrastructure Network (NNIN) (ECS-0335765). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/7/27

Y1 - 2016/7/27

N2 - We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

AB - We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.

UR - http://hdl.handle.net/10754/678387

UR - https://www.osapublishing.org/abstract.cfm?URI=oe-24-16-17868

UR - http://www.scopus.com/inward/record.url?scp=84987624249&partnerID=8YFLogxK

U2 - 10.1364/OE.24.017868

DO - 10.1364/OE.24.017868

M3 - Article

SN - 1094-4087

VL - 24

SP - 17868

EP - 17873

JO - OPTICS EXPRESS

JF - OPTICS EXPRESS

IS - 16

ER -

High luminous efficacy green light-emitting diodes with AlGaN cap layer

Abstract

Bibliographical note

ASJC Scopus subject areas

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