High hole concentration in Mg-doped a -plane Ga1-x Inx N (0

Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1063/1.3021087

High hole concentration in Mg-doped a -plane Ga1-x Inx N (0

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The electrical properties of Mg-doped a -plane Ga1-x Inx N (0

Original language	English (US)
Journal	Applied Physics Letters
Volume	93
Issue number	18
DOIs	https://doi.org/10.1063/1.3021087
State	Published - Nov 17 2008
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3021087

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title = "High hole concentration in Mg-doped a -plane Ga1-x Inx N (0",

abstract = "The electrical properties of Mg-doped a -plane Ga1-x Inx N (0",

author = "Daisuke Iida and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

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doi = "10.1063/1.3021087",

language = "English (US)",

volume = "93",

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AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2008/11/17

Y1 - 2008/11/17

N2 - The electrical properties of Mg-doped a -plane Ga1-x Inx N (0

AB - The electrical properties of Mg-doped a -plane Ga1-x Inx N (0

UR - https://pubs.aip.org/apl/article/93/18/182108/335627/High-hole-concentration-in-Mg-doped-a-plane-Ga1

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U2 - 10.1063/1.3021087

DO - 10.1063/1.3021087

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

High hole concentration in Mg-doped a -plane Ga1-x Inx N (0

Abstract

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ASJC Scopus subject areas

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