High gain semiconductor optical amplifier — Laser diode at visible wavelength

Chao Shen; Changmin Lee; Tien Khee Ng; Shuji Nakamura; James S. Speck; Steven P. DenBaars; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi

doi:10.1109/IEDM.2016.7838473

High gain semiconductor optical amplifier — Laser diode at visible wavelength

Chao Shen, Changmin Lee, Tien Khee Ng, Shuji Nakamura, James S. Speck, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

Original language	English (US)
Title of host publication	2016 IEEE International Electron Devices Meeting (IEDM)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	22.4.1-22.4.4
Number of pages	1
ISBN (Print)	9781509039029
DOIs	https://doi.org/10.1109/IEDM.2016.7838473
State	Published - Feb 7 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).

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10.1109/IEDM.2016.7838473

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Shen, C., Lee, C., Ng, T. K., Nakamura, S., Speck, J. S., DenBaars, S. P., Alyamani, A. Y., El-Desouki, M. M., & Ooi, B. S. (2017). High gain semiconductor optical amplifier — Laser diode at visible wavelength. In 2016 IEEE International Electron Devices Meeting (IEDM) (pp. 22.4.1-22.4.4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IEDM.2016.7838473

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title = "High gain semiconductor optical amplifier — Laser diode at visible wavelength",

abstract = "We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.",

author = "Chao Shen and Changmin Lee and Ng, {Tien Khee} and Shuji Nakamura and Speck, {James S.} and DenBaars, {Steven P.} and Alyamani, {Ahmed Y.} and El-Desouki, {Munir M.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).",

year = "2017",

month = feb,

day = "7",

doi = "10.1109/IEDM.2016.7838473",

language = "English (US)",

isbn = "9781509039029",

pages = "22.4.1--22.4.4",

booktitle = "2016 IEEE International Electron Devices Meeting (IEDM)",

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T1 - High gain semiconductor optical amplifier — Laser diode at visible wavelength

AU - Shen, Chao

AU - Lee, Changmin

AU - Ng, Tien Khee

AU - Nakamura, Shuji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Alyamani, Ahmed Y.

AU - El-Desouki, Munir M.

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).

PY - 2017/2/7

Y1 - 2017/2/7

N2 - We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

AB - We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

UR - http://hdl.handle.net/10754/623176

UR - http://ieeexplore.ieee.org/document/7838473/

UR - http://www.scopus.com/inward/record.url?scp=85014426808&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2016.7838473

DO - 10.1109/IEDM.2016.7838473

M3 - Conference contribution

SN - 9781509039029

SP - 22.4.1-22.4.4

BT - 2016 IEEE International Electron Devices Meeting (IEDM)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

High gain semiconductor optical amplifier — Laser diode at visible wavelength

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