We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.
|Original language||English (US)|
|Title of host publication||2016 IEEE International Electron Devices Meeting (IEDM)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||1|
|State||Published - Feb 7 2017|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).