High electron mobility thin-film transistors based on Ga₂O₃grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Keyphrases

• Low Temperature 100%
• Thin-film Transistors 100%
• High Electron Mobility 100%
• Ultrasonic Spray Pyrolysis 100%
• High Temperature 50%
• Annealing 50%
• Transistor 50%
• As-grown 50%
• Optical Properties 50%
• Electrical Properties 50%
• Structural Properties 50%
• Morphological Properties 50%
• As-deposited 50%
• Electronic Properties 50%
• Energy Band Gap 50%
• Electron Mobility 50%
• Oxygen Defects 50%
• Post-deposition Annealing 50%
• Characterization Techniques 50%
• Ambient Atmosphere 50%
• Post Deposition 50%
• N-type Conductivity 50%

Material Science

• Thin-Film Transistor 100%
• Spray Pyrolysis 100%
• Electron Mobility 100%
• Annealing 50%
• Transistor 50%
• Film 50%
• Morphology 50%