High electron mobility thin-film transistors based on Ga2O3grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Stuart R. Thomas; George Adamopoulos; Yen Hung Lin; Hendrik Faber; Labrini Sygellou; Emmanuel Stratakis; Nikos Pliatsikas; Panos A. Patsalas; Thomas D. Anthopoulos

doi:10.1063/1.4894643

High electron mobility thin-film transistors based on Ga₂O₃grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Stuart R. Thomas^*, George Adamopoulos, Yen Hung Lin, Hendrik Faber, Labrini Sygellou, Emmanuel Stratakis, Nikos Pliatsikas, Panos A. Patsalas, Thomas D. Anthopoulos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

We report on thin-film transistors based on Ga₂O₃films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400-450°C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700°C) were also investigated. Both as-grown and post-deposition annealed Ga₂O₃films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9eV. Transistors based on as-deposited Ga₂O₃films show n-type conductivity with the maximum electron mobility of ∼2cm²/V s.

Original language	English (US)
Article number	092105
Journal	Applied Physics Letters
Volume	105
Issue number	9
DOIs	https://doi.org/10.1063/1.4894643
State	Published - Sep 1 2014
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4894643

Cite this

@article{4490b36d66184170a2a1a59c7ce64578,

title = "High electron mobility thin-film transistors based on Ga2O3grown by atmospheric ultrasonic spray pyrolysis at low temperatures",

abstract = "We report on thin-film transistors based on Ga2O3films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400-450°C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700°C) were also investigated. Both as-grown and post-deposition annealed Ga2O3films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9eV. Transistors based on as-deposited Ga2O3films show n-type conductivity with the maximum electron mobility of ∼2cm2/V s.",

author = "Thomas, {Stuart R.} and George Adamopoulos and Lin, {Yen Hung} and Hendrik Faber and Labrini Sygellou and Emmanuel Stratakis and Nikos Pliatsikas and Patsalas, {Panos A.} and Anthopoulos, {Thomas D.}",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = sep,

day = "1",

doi = "10.1063/1.4894643",

language = "English (US)",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "9",

}

TY - JOUR

T1 - High electron mobility thin-film transistors based on Ga2O3grown by atmospheric ultrasonic spray pyrolysis at low temperatures

AU - Thomas, Stuart R.

AU - Adamopoulos, George

AU - Lin, Yen Hung

AU - Faber, Hendrik

AU - Sygellou, Labrini

AU - Stratakis, Emmanuel

AU - Pliatsikas, Nikos

AU - Patsalas, Panos A.

AU - Anthopoulos, Thomas D.

PY - 2014/9/1

Y1 - 2014/9/1

N2 - We report on thin-film transistors based on Ga2O3films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400-450°C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700°C) were also investigated. Both as-grown and post-deposition annealed Ga2O3films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9eV. Transistors based on as-deposited Ga2O3films show n-type conductivity with the maximum electron mobility of ∼2cm2/V s.

AB - We report on thin-film transistors based on Ga2O3films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400-450°C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700°C) were also investigated. Both as-grown and post-deposition annealed Ga2O3films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9eV. Transistors based on as-deposited Ga2O3films show n-type conductivity with the maximum electron mobility of ∼2cm2/V s.

UR - http://www.scopus.com/inward/record.url?scp=84907012628&partnerID=8YFLogxK

U2 - 10.1063/1.4894643

DO - 10.1063/1.4894643

M3 - Article

AN - SCOPUS:84907012628

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092105

ER -