High-efficiency silicon heterojunction solar cells: From physics to production lines

S. De Wolf; Y. Andrault; L. Barraud; R. Bartlome; D. Bätzner; P. Bôle; G. Choong; B. Demaurex; A. Descoeudres; C. Guérin; N. Holm; M. Kobas; D. Lachenal; B. Mendes; B. Strahm; M. Tesfai; G. Wahli; F. Wuensch; F. Zicarelli; A. Buechel; C. Ballif

doi:10.1109/ICSICT.2010.5667849

High-efficiency silicon heterojunction solar cells: From physics to production lines

S. De Wolf^*, Y. Andrault, L. Barraud, R. Bartlome, D. Bätzner, P. Bôle, G. Choong, B. Demaurex, A. Descoeudres, C. Guérin, N. Holm, M. Kobas, D. Lachenal, B. Mendes, B. Strahm, M. Tesfai, G. Wahli, F. Wuensch, F. Zicarelli, A. BuechelC. Ballif

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Silicon heterojunction technology (Si-HJT) consists of thin amorphous silicon layers on monocrystalline silicon wafers and allows for photovoltaic solar cells with energy-conversion efficiencies above 20 %, also at industrial-production level. This article reports how this may be achieved. First, we focus on the surface-passivation mechanism of intrinsic and doped amorphous silicon films in such solar cells, enabling record-high values for the open-circuit voltage. Next, the industrial upscaling in large-area reactors of such film deposition is discussed, including the fabrication of solar cells with energy-conversion efficiencies as high as 21%.

Original language	English (US)
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1986-1989
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2010.5667849
State	Published - 2010
Externally published	Yes
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Nov 1 2010 → Nov 4 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	11/1/10 → 11/4/10

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/ICSICT.2010.5667849

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De Wolf, S., Andrault, Y., Barraud, L., Bartlome, R., Bätzner, D., Bôle, P., Choong, G., Demaurex, B., Descoeudres, A., Guérin, C., Holm, N., Kobas, M., Lachenal, D., Mendes, B., Strahm, B., Tesfai, M., Wahli, G., Wuensch, F., Zicarelli, F., ... Ballif, C. (2010). High-efficiency silicon heterojunction solar cells: From physics to production lines. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1986-1989). Article 5667849 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667849

De Wolf, S. ; Andrault, Y. ; Barraud, L. et al. / High-efficiency silicon heterojunction solar cells : From physics to production lines. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1986-1989 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{dfda9b61f72d4627b2bf269865bd62dd,

title = "High-efficiency silicon heterojunction solar cells: From physics to production lines",

abstract = "Silicon heterojunction technology (Si-HJT) consists of thin amorphous silicon layers on monocrystalline silicon wafers and allows for photovoltaic solar cells with energy-conversion efficiencies above 20 %, also at industrial-production level. This article reports how this may be achieved. First, we focus on the surface-passivation mechanism of intrinsic and doped amorphous silicon films in such solar cells, enabling record-high values for the open-circuit voltage. Next, the industrial upscaling in large-area reactors of such film deposition is discussed, including the fabrication of solar cells with energy-conversion efficiencies as high as 21%.",

author = "{De Wolf}, S. and Y. Andrault and L. Barraud and R. Bartlome and D. B{\"a}tzner and P. B{\^o}le and G. Choong and B. Demaurex and A. Descoeudres and C. Gu{\'e}rin and N. Holm and M. Kobas and D. Lachenal and B. Mendes and B. Strahm and M. Tesfai and G. Wahli and F. Wuensch and F. Zicarelli and A. Buechel and C. Ballif",

year = "2010",

doi = "10.1109/ICSICT.2010.5667849",

language = "English (US)",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "1986--1989",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

De Wolf, S, Andrault, Y, Barraud, L, Bartlome, R, Bätzner, D, Bôle, P, Choong, G, Demaurex, B, Descoeudres, A, Guérin, C, Holm, N, Kobas, M, Lachenal, D, Mendes, B, Strahm, B, Tesfai, M, Wahli, G, Wuensch, F, Zicarelli, F, Buechel, A & Ballif, C 2010, High-efficiency silicon heterojunction solar cells: From physics to production lines. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667849, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1986-1989, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667849

High-efficiency silicon heterojunction solar cells: From physics to production lines. / De Wolf, S.; Andrault, Y.; Barraud, L. et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1986-1989 5667849 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-efficiency silicon heterojunction solar cells

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

AU - De Wolf, S.

AU - Andrault, Y.

AU - Barraud, L.

AU - Bartlome, R.

AU - Bätzner, D.

AU - Bôle, P.

AU - Choong, G.

AU - Demaurex, B.

AU - Descoeudres, A.

AU - Guérin, C.

AU - Holm, N.

AU - Kobas, M.

AU - Lachenal, D.

AU - Mendes, B.

AU - Strahm, B.

AU - Tesfai, M.

AU - Wahli, G.

AU - Wuensch, F.

AU - Zicarelli, F.

AU - Buechel, A.

AU - Ballif, C.

PY - 2010

Y1 - 2010

N2 - Silicon heterojunction technology (Si-HJT) consists of thin amorphous silicon layers on monocrystalline silicon wafers and allows for photovoltaic solar cells with energy-conversion efficiencies above 20 %, also at industrial-production level. This article reports how this may be achieved. First, we focus on the surface-passivation mechanism of intrinsic and doped amorphous silicon films in such solar cells, enabling record-high values for the open-circuit voltage. Next, the industrial upscaling in large-area reactors of such film deposition is discussed, including the fabrication of solar cells with energy-conversion efficiencies as high as 21%.

AB - Silicon heterojunction technology (Si-HJT) consists of thin amorphous silicon layers on monocrystalline silicon wafers and allows for photovoltaic solar cells with energy-conversion efficiencies above 20 %, also at industrial-production level. This article reports how this may be achieved. First, we focus on the surface-passivation mechanism of intrinsic and doped amorphous silicon films in such solar cells, enabling record-high values for the open-circuit voltage. Next, the industrial upscaling in large-area reactors of such film deposition is discussed, including the fabrication of solar cells with energy-conversion efficiencies as high as 21%.

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U2 - 10.1109/ICSICT.2010.5667849

DO - 10.1109/ICSICT.2010.5667849

M3 - Conference contribution

AN - SCOPUS:78751505043

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1986

EP - 1989

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Y2 - 1 November 2010 through 4 November 2010

ER -

De Wolf S, Andrault Y, Barraud L, Bartlome R, Bätzner D, Bôle P et al. High-efficiency silicon heterojunction solar cells: From physics to production lines. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1986-1989. 5667849. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667849

High-efficiency silicon heterojunction solar cells: From physics to production lines

Abstract

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ASJC Scopus subject areas

UN SDGs

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