High-Efficiency Photovoltaic Devices using Trap-Controlled Quantum-Dot Ink prepared via Phase-Transfer Exchange

Havid Aqoma; Muhibullah Al Mubarok; Wisnu Tantyo Hadmojo; Eun Hye Lee; Tae Wook Kim; Tae Kyu Ahn; Seung Hwan Oh; Sung Yeon Jang

doi:10.1002/adma.201605756

High-Efficiency Photovoltaic Devices using Trap-Controlled Quantum-Dot Ink prepared via Phase-Transfer Exchange

Havid Aqoma, Muhibullah Al Mubarok, Wisnu Tantyo Hadmojo, Eun Hye Lee, Tae Wook Kim, Tae Kyu Ahn, Seung Hwan Oh, Sung Yeon Jang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

119 Scopus citations

Abstract

Colloidal-quantum-dot (CQD) photovoltaic devices are promising candidates for low-cost power sources owing to their low-temperature solution processability and bandgap tunability. A power conversion efficiency (PCE) of >10% is achieved for these devices; however, there are several remaining obstacles to their commercialization, including their high energy loss due to surface trap states and the complexity of the multiple-step CQD-layer-deposition process. Herein, high-efficiency photovoltaic devices prepared with CQD-ink using a phase-transfer-exchange (PTE) method are reported. Using CQD-ink, the fabrication of active layers by single-step coating and the suppression of surface trap states are achieved simultaneously. The CQD-ink photovoltaic devices achieve much higher PCEs (10.15% with a certified PCE of 9.61%) than the control devices (7.85%) owing to improved charge drift and diffusion. Notably, the CQD-ink devices show much lower energy loss than other reported high-efficiency CQD devices. This result reveals that the PTE method is an effective strategy for controlling trap states in CQDs.

Original language	English (US)
Article number	1605756
Journal	Advanced Materials
Volume	29
Issue number	19
DOIs	https://doi.org/10.1002/adma.201605756
State	Published - May 17 2017

Bibliographical note

Funding Information:
The authors gratefully acknowledge support from the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea (No. 20133030000210), the National Research Foundation (NRF) Grant funded by the Korean Government (MSIP, No. 2016R1A5A1012966), the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2016M1A2A2940912), and the Global Scholarship Program for Foreign Graduate Students at the Kookmin University in Korea.

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

phase-transfer exchange
quantum dots
solar cells
surface traps
voltage loss

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/adma.201605756

Cite this

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title = "High-Efficiency Photovoltaic Devices using Trap-Controlled Quantum-Dot Ink prepared via Phase-Transfer Exchange",

abstract = "Colloidal-quantum-dot (CQD) photovoltaic devices are promising candidates for low-cost power sources owing to their low-temperature solution processability and bandgap tunability. A power conversion efficiency (PCE) of >10% is achieved for these devices; however, there are several remaining obstacles to their commercialization, including their high energy loss due to surface trap states and the complexity of the multiple-step CQD-layer-deposition process. Herein, high-efficiency photovoltaic devices prepared with CQD-ink using a phase-transfer-exchange (PTE) method are reported. Using CQD-ink, the fabrication of active layers by single-step coating and the suppression of surface trap states are achieved simultaneously. The CQD-ink photovoltaic devices achieve much higher PCEs (10.15% with a certified PCE of 9.61%) than the control devices (7.85%) owing to improved charge drift and diffusion. Notably, the CQD-ink devices show much lower energy loss than other reported high-efficiency CQD devices. This result reveals that the PTE method is an effective strategy for controlling trap states in CQDs.",

keywords = "phase-transfer exchange, quantum dots, solar cells, surface traps, voltage loss",

author = "Havid Aqoma and {Al Mubarok}, Muhibullah and Hadmojo, {Wisnu Tantyo} and Lee, {Eun Hye} and Kim, {Tae Wook} and Ahn, {Tae Kyu} and Oh, {Seung Hwan} and Jang, {Sung Yeon}",

note = "Funding Information: The authors gratefully acknowledge support from the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea (No. 20133030000210), the National Research Foundation (NRF) Grant funded by the Korean Government (MSIP, No. 2016R1A5A1012966), the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2016M1A2A2940912), and the Global Scholarship Program for Foreign Graduate Students at the Kookmin University in Korea. Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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doi = "10.1002/adma.201605756",

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AU - Aqoma, Havid

AU - Al Mubarok, Muhibullah

AU - Hadmojo, Wisnu Tantyo

AU - Lee, Eun Hye

AU - Kim, Tae Wook

AU - Ahn, Tae Kyu

AU - Oh, Seung Hwan

AU - Jang, Sung Yeon

N1 - Funding Information: The authors gratefully acknowledge support from the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea (No. 20133030000210), the National Research Foundation (NRF) Grant funded by the Korean Government (MSIP, No. 2016R1A5A1012966), the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2016M1A2A2940912), and the Global Scholarship Program for Foreign Graduate Students at the Kookmin University in Korea. Publisher Copyright: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2017/5/17

Y1 - 2017/5/17

N2 - Colloidal-quantum-dot (CQD) photovoltaic devices are promising candidates for low-cost power sources owing to their low-temperature solution processability and bandgap tunability. A power conversion efficiency (PCE) of >10% is achieved for these devices; however, there are several remaining obstacles to their commercialization, including their high energy loss due to surface trap states and the complexity of the multiple-step CQD-layer-deposition process. Herein, high-efficiency photovoltaic devices prepared with CQD-ink using a phase-transfer-exchange (PTE) method are reported. Using CQD-ink, the fabrication of active layers by single-step coating and the suppression of surface trap states are achieved simultaneously. The CQD-ink photovoltaic devices achieve much higher PCEs (10.15% with a certified PCE of 9.61%) than the control devices (7.85%) owing to improved charge drift and diffusion. Notably, the CQD-ink devices show much lower energy loss than other reported high-efficiency CQD devices. This result reveals that the PTE method is an effective strategy for controlling trap states in CQDs.

AB - Colloidal-quantum-dot (CQD) photovoltaic devices are promising candidates for low-cost power sources owing to their low-temperature solution processability and bandgap tunability. A power conversion efficiency (PCE) of >10% is achieved for these devices; however, there are several remaining obstacles to their commercialization, including their high energy loss due to surface trap states and the complexity of the multiple-step CQD-layer-deposition process. Herein, high-efficiency photovoltaic devices prepared with CQD-ink using a phase-transfer-exchange (PTE) method are reported. Using CQD-ink, the fabrication of active layers by single-step coating and the suppression of surface trap states are achieved simultaneously. The CQD-ink photovoltaic devices achieve much higher PCEs (10.15% with a certified PCE of 9.61%) than the control devices (7.85%) owing to improved charge drift and diffusion. Notably, the CQD-ink devices show much lower energy loss than other reported high-efficiency CQD devices. This result reveals that the PTE method is an effective strategy for controlling trap states in CQDs.

KW - phase-transfer exchange

KW - quantum dots

KW - solar cells

KW - surface traps

KW - voltage loss

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SN - 0935-9648

VL - 29

JO - Advanced Materials

JF - Advanced Materials

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ER -

High-Efficiency Photovoltaic Devices using Trap-Controlled Quantum-Dot Ink prepared via Phase-Transfer Exchange

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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