High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Meng-Lin Tsai; Ming-yang Li; Yumeng Shi; Lih-Juann Chen; Lain-Jong Li; Jr-Hau He

doi:10.1039/c6nh00075d

High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Meng-Lin Tsai, Ming-yang Li, Yumeng Shi, Lih-Juann Chen, Lain-Jong Li, Jr-Hau He

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

Original language	English (US)
Pages (from-to)	37-42
Number of pages	6
Journal	Nanoscale Horiz.
Volume	2
Issue number	1
DOIs	https://doi.org/10.1039/c6nh00075d
State	Published - Oct 28 2016

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abstract = "Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.",

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AU - Tsai, Meng-Lin

AU - Li, Ming-yang

AU - Shi, Yumeng

AU - Chen, Lih-Juann

AU - Li, Lain-Jong

AU - He, Jr-Hau

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2016/10/28

Y1 - 2016/10/28

N2 - Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

AB - Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

UR - http://hdl.handle.net/10754/625553

UR - http://pubs.rsc.org/en/Content/ArticleLanding/2017/NH/C6NH00075D#!divAbstract

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ER -

High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Abstract

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