Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.
|Original language||English (US)|
|Number of pages||6|
|State||Published - Oct 28 2016|