High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Meng-Lin Tsai, Ming-yang Li, Yumeng Shi, Lih-Juann Chen, Lain-Jong Li, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.
Original languageEnglish (US)
Pages (from-to)37-42
Number of pages6
JournalNanoscale Horiz.
Issue number1
StatePublished - Oct 28 2016

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KAUST Repository Item: Exported on 2020-10-01


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