High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Daehwan Jung; Justin Norman; M. J. Kennedy; Chen Shang; Bongki Shin; Yating Wan; Arthur C. Gossard; John E. Bowers

doi:10.1063/1.4993226

High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Daehwan Jung, Justin Norman, M. J. Kennedy, Chen Shang, Bongki Shin, Yating Wan, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journal › Article › peer-review

140 Scopus citations

Abstract

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

Original language	English (US)
Journal	Applied Physics Letters
Volume	111
Issue number	12
DOIs	https://doi.org/10.1063/1.4993226
State	Published - Sep 18 2017
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si",

abstract = "We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.",

author = "Daehwan Jung and Justin Norman and Kennedy, {M. J.} and Chen Shang and Bongki Shin and Yating Wan and Gossard, {Arthur C.} and Bowers, {John E.}",

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doi = "10.1063/1.4993226",

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T1 - High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si

AU - Jung, Daehwan

AU - Norman, Justin

AU - Kennedy, M. J.

AU - Shang, Chen

AU - Shin, Bongki

AU - Wan, Yating

AU - Gossard, Arthur C.

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/9/18

Y1 - 2017/9/18

N2 - We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

AB - We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

UR - https://pubs.aip.org/apl/article/111/12/122107/33899/High-efficiency-low-threshold-current-1-3-m-InAs

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U2 - 10.1063/1.4993226

DO - 10.1063/1.4993226

M3 - Article

SN - 0003-6951

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si

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