High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

Mufasila Mumthaz Muhammed, Norah M. Alwadai, Sergei Lopatin, Akito Kuramata, Iman S. Roqan

Research output: Contribution to journalArticlepeer-review

87 Scopus citations

Fingerprint

Dive into the research topics of 'High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate'. Together they form a unique fingerprint.

Engineering

Material Science

Keyphrases