Abstract
In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.
Original language | English (US) |
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Pages (from-to) | 1978 |
Journal | Photonics Research |
Volume | 10 |
Issue number | 8 |
DOIs | |
State | Published - Jul 28 2022 |
Bibliographical note
KAUST Repository Item: Exported on 2022-09-14Acknowledgements: Ministry of Science and Technology, Taiwan (110-2124-M-A49-003-, 108-2221-E-009-113-MY3). The authors thank Wei-Bin Lee from the Hon Hai Research Institute for helpful discussions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics