High-density polyethylene - An inert additive with stabilizing effects on organic field-effect transistors

Alberto D. Scaccabarozzi, James I. Basham, Liyang Yu, Paul Westacott, Weimin Zhang, Aram Amassian, Andrew Wadsworth, Mario Caironi, David J. Gundlach, Natalie Stingelin

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Organic electronics technologies have attracted considerable interest over the last few decades and have become promising alternatives to conventional, inorganic platforms for specific applications. To fully exploit the touted potential of plastic electronics, however, other prerequisites than only electronic functions need to be fulfiled, including good mechanical stability, ease of processing and high device reliability. A possible method to overcome these issues is the employment of insulating:semiconducting polymer blends, which have been demonstrated to display favourable rheological and mechanical properties, generally provided by the insulating component, without negatively affecting the optoelectronic performance of the semiconductor. Here, we demonstrate that binary blends comprising the semicrystalline high-density polyethylene (HDPE) in combination with hole- and electron-transporting organic semiconductors allow fabrication of p-type and n-type thin-film transistors of notably improved device stability and, in some scenarios, improved device performance. We observe, for example, considerably lower subthreshold slopes and drastically reduced bias-stress effects in devices fabricated with a hole-transporting diketopyrrolopyrrole polymer derivative when blended with HDPE and significantly enhanced charge-carrier mobilities and shelf life in case of transistors made with blends between HDPE and the electron-transporting poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}, i.e. P(NDI2OD-T2), also known as N2200, compared to the neat material, highlighting the broad, versatile benefits blending semiconducting species with a semicrystalline commodity polymer can have. This journal is
Original languageEnglish (US)
Pages (from-to)15406-15415
Number of pages10
JournalJournal of Materials Chemistry C
Volume8
Issue number43
DOIs
StatePublished - 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-11-25
Acknowledged KAUST grant number(s): OSR-2016-CRG5-3029-01
Acknowledgements: NS acknowledges funding from the National Science Foundation, grant DMR-1729737 as well as from the KAUST CRG grant OSR-2016-CRG5-3029-01. AS and MC acknowledge financial support by the European Research Council under the European Union's Horizon 2020 research and innovation program “HEROIC,” grant agreement 638059. The authors would like to thank James H. Bannock for the supply of P3HT. GIWAXS measurements were carried out at the D-line, Cornell High Energy Synchrotron Source (CHESS) at Cornell University. We thank Dr Detlef-M. Smilgies and Dr Ruipeng Li from CHESS for their assistance with in situ GIWAXS measurements.

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