TY - GEN
T1 - High-Density FeFET-based CAM Cell Design Via Multi-Dimensional Encoding
AU - Noureddine, Hadi
AU - Bekdache, Omar
AU - Al Tawil, Mohamad
AU - Kanj, Rouwaida
AU - Chehab, Ali
AU - Fouda, Mohamed E.
AU - Eltawil, Ahmed
N1 - KAUST Repository Item: Exported on 2023-06-06
PY - 2023/6/5
Y1 - 2023/6/5
N2 - Content addressable memory is one of the most frequently used technologies in Data-centric applications due to its exceptional search parallelism capability. SRAM cells were initially used to implement CAM designs. Recent innovations proposed using compact nonvolatile memories instead. FeFETs emerged as a multi-level NVM device with promising potential and 2T FeFET CAM designs were studied. In this paper, a new potential is discussed for increasing the density efficiency of FeFET CAM architectures by adapting higher-dimensional encoding using 3T and 4T CAM designs. We propose a scalable greedy search algorithm for maximizing encoding capabilities. We compare the density, latency, accuracy, and energy consumption of our designs to standard 2T architecture demonstrating a 4x and 8x decrease in fail probability with up to 16% and 26.5% increase in memory density (bits/unit-area) in the 3T and 4T designs respectively.
AB - Content addressable memory is one of the most frequently used technologies in Data-centric applications due to its exceptional search parallelism capability. SRAM cells were initially used to implement CAM designs. Recent innovations proposed using compact nonvolatile memories instead. FeFETs emerged as a multi-level NVM device with promising potential and 2T FeFET CAM designs were studied. In this paper, a new potential is discussed for increasing the density efficiency of FeFET CAM architectures by adapting higher-dimensional encoding using 3T and 4T CAM designs. We propose a scalable greedy search algorithm for maximizing encoding capabilities. We compare the density, latency, accuracy, and energy consumption of our designs to standard 2T architecture demonstrating a 4x and 8x decrease in fail probability with up to 16% and 26.5% increase in memory density (bits/unit-area) in the 3T and 4T designs respectively.
UR - http://hdl.handle.net/10754/692365
UR - https://dl.acm.org/doi/10.1145/3583781.3590301
U2 - 10.1145/3583781.3590301
DO - 10.1145/3583781.3590301
M3 - Conference contribution
BT - Proceedings of the Great Lakes Symposium on VLSI 2023
PB - ACM
ER -